Mathieu Luisier

Full Band, Atomistic Scattering in Nanowires

Full Band, Atomistic Scattering in Nanowires Mathieu Luisier, Gerhard Klimeck

Objective:

  • Understand transport with incoherent scattering – energy and phase loss

Requirements:

  • Realistic device extensions
  • Atomistic basis
  • General phonon description

Approach:

  • NEGF problem formulation
  • Tight binding basis
  • Consider nanowires first
  • All phonon modes, free wire
  • Multi-Level parallelism (V,E,space)

Computational Burden:

  • 70,000 cores for 12 hours
    => ~96CPU years!

Impact:

  • first atomistic/incoherent sims
  • Model potential drop in emitter
  • Published []

Powerpoint slide as ppt, pdf, or as image below.

Mathieu Luisier's Pages

Biography Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices Full Band, Atomistic Scattering in Nanowires Phonon-limited Mobility in Si nanowires FETs Injection Velocity in Si, Ge, and InAs NW FETs Electron-Phonon Scattering in NW FETs Line Edge Roughness in GNR Tunneling FETs Petascale Nanoelectronic Device Simulations

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