Mathieu Luisier

Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations

Band-To-Band-Tunneling in InAs Devices
Momentum-Energy-Resolved Transport in Full-Band Simulations		 Mathieu Luisier, Gerhard Klimeck

Objective:

  • Demonstrate BTBT capability

Approach:

  • UTB - InAs PIN diode quantization automatically included
  • Compute energy and momentum transmission coefficient

Result:

  • Conduction band moves rapidly
    => determines k-cutoff
  • Complicated hole dispersion creates Fano-resonance like features in transmission

Impact:

  • Demonstrate explicit E-k-dependence in a full band atomistic model

Powerpoint slide as ppt, pdf, or as image below.

Mathieu Luisier's Pages

Biography Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices Full Band, Atomistic Scattering in Nanowires Phonon-limited Mobility in Si nanowires FETs Injection Velocity in Si, Ge, and InAs NW FETs Electron-Phonon Scattering in NW FETs Line Edge Roughness in GNR Tunneling FETs Petascale Nanoelectronic Device Simulations

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