Mathieu Luisier

Electron-Phonon Scattering in NW FETs

Electron-Phonon Scattering in NW FETs Mathieu Luisier, Gerhard Klimeck


  • Solve one of the Grand Challenge problems in device simulation: the simultaneous inclusion of an atomistic description of the simulation domain, a full-band description of the materials, and electron-phonon scattering


  • Use of the sp3d5s* tight-binding model to describe electrons and holes
  • Use of the Non-equilibrium Green's Function (NEGF) formalism to solve quantum transport
  • Electron-phonon scattering in the self-consistent Born approximation
  • Efficient multi-level parallelization scheme

Results and Impacts:

  • Modification of current distribution and band edges and reduction of drain current
  • First dissipative quantum transport simulations of realistically extended nanowire transistor structures

Ongoing Work:

  • Mobility extraction in n- and p-doped nanowires with different crystal orientations
  • Look for experimental data to verify the model

Image Caption:

  • Energy-resolved current distribution in a nanoscale NW FET. Up: coherent transport without energy loss. Down: with phonon scattering. Energy loss and source access resistance.

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