Mathieu Luisier

Objective:

• Solve one of the Grand Challenge problems in device simulation: the simultaneous inclusion of an atomistic description of the simulation domain, a full-band description of the materials, and electron-phonon scattering

Approach:

• Use of the sp3d5s* tight-binding model to describe electrons and holes
• Use of the Non-equilibrium Green's Function (NEGF) formalism to solve quantum transport
• Electron-phonon scattering in the self-consistent Born approximation
• Efficient multi-level parallelization scheme

Results and Impacts:

• Modification of current distribution and band edges and reduction of drain current
• First dissipative quantum transport simulations of realistically extended nanowire transistor structures

Ongoing Work:

• Mobility extraction in n- and p-doped nanowires with different crystal orientations
• Look for experimental data to verify the model

Image Caption:

• Energy-resolved current distribution in a nanoscale NW FET. Up: coherent transport without energy loss. Down: with phonon scattering. Energy loss and source access resistance.