Mathieu Luisier

Petascale Nanoelectronic Device Simulations

Petascale Nanoelectronic Device Simulations Mathieu Luisier, Gerhard Klimeck

Objective:

  • Physics-based simulations of nanoelectronic devices with an atomistic resolution and a sustained performance > 1 Pflop/s

Approach:

  • Multi-Level parallelism
  • Dynamic load balancing in double integral
  • Computational interleaving
  • Development of new direct solver (block cyclic reduction)

Results

  • Highly efficient parallel algorithm, stressing the most advanced resources available today

Impacts:

  • Move from nano-science to nanodevice engineering in minutes
  • Unprecedented insight into atomistic device simulation
  • One of the few codes with sustained performances at the peta-scale on Jaguar @ ORNL

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Mathieu Luisier's Pages

Biography Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices Full Band, Atomistic Scattering in Nanowires Phonon-limited Mobility in Si nanowires FETs Injection Velocity in Si, Ge, and InAs NW FETs Electron-Phonon Scattering in NW FETs Line Edge Roughness in GNR Tunneling FETs Petascale Nanoelectronic Device Simulations