RISE Lab awarded NSF grant to study brain-inspired computing device!

RISE Lab is excited to announce that it received an NSF award of $374,060 for 3 years! We thank the Division of Electrical, Communications and Cyber Systems (ECCS) under the Engineering Directorate for its generous support of our vision of making truly energy-efficient AI hardware possible through material and device engineering co-designed with circuit design and systems innovation!

Prof. Islam gave an invited talk at 2025 IFETC

PI of RISE Lab Prof. Raisul Islam gave an invited talk at the IEEE Flexible Electronics Technology Conference 2025, a premer conference for the flexible electronics community held at the beautiful University of British Columbia capus in Vancouver, Canda. Prof. Islam thanks the conference organizing committee for the opportunity!
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Materials and Interfaces for Energy-Efficient Electronics and Quantum Technologies

Intelligent computing demands more than smaller transistors. Moving data between memory and logic consumes energy, while heat limits how closely devices can be integrated. The Raisul Islam Semiconductor Engineering (RISE) Lab at Purdue University addresses these challenges through materials, interfaces, and devices. We connect materials science with electrical engineering to develop energy-efficient electronic devices, explore materials for quantum applications, and address thermal challenges in integrated systems.

Our research brings together three areas: Heterogeneous Device Integration, Functional Material Growth, and Nanoscale Thermal Transport. We engineer ferroelectric and resistive memory devices for computing, grow electronic and thermal thin films using atomic layer deposition and sputtering, and measure heat flow at the nanoscale. These efforts are closely connected: material growth determines device properties, while local thermal measurements reveal how interfaces and microstructure affect heat transport. Thermal measurements guide material growth and thermal-aware device co-design.

We carry this work from individual materials and devices toward integrated systems. Through CMOS+X, we combine emerging devices with conventional silicon circuits to evaluate new functions in working chips. We are also exploring quantum materials and thermal transport at cryogenic temperatures, where understanding local properties is essential to future device development. Across these directions, our aim is to make material discovery, device engineering, and system design inform one another.