Selected Publications

The publications are listed chronologically (most recent first)

Journals

15. R. Islam, S. Qin, S. Deshmukh, Z. Yu, C. Körŏglu, A. I. Khan, K. Schauble, K. C. Saraswat, E. Pop, and H.-S. P. Wong, Improved Gradual Resistive Switching Range and 1000x On/off Ratio in HfOx RRAM Achieved with a Ge2Sb2Te5 Thermal Barrier, Applied Physics Letters, 121, 082103 (2022) 

14. S. Deshmukh, M. M. Rojo, E. Yalon, S. Vaziri, C. Körŏglu, R. Islam, R. A. Iglesias, K. Saraswat, and E. Pop, Direct Measurement of Nanoscale Filamentary Hot Spots in Resistive Memory Devices, Science Advances, 8, eabk1514 (2022)

13. K. N. Nazif, A. Daus, J. Hong, N. Lee, S. Vaziri, A. Kumar, F. Nitta, M. Chen, S. Kananian, R. Islam, K.-H. Kim, J.-H. Park, A. Poon, M. L. Brongersma, E. Pop, K. C. Saraswat, High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells, Nature Communications, 12, 7034 (2021)

12. A.I. Khan, A. Daus, R. Islam, K. M. Neilson, H. R. Lee, H.-S. P. Wong, and E. Pop, Ultralow-switching Current Density Multilevel Phase-change Memory on a Flexible Substrate, Science, 373 (6560), 1243-1247 (2021)

11. K. N. Nazif, A. Kumar, J. Hong, N. Lee, R. Islam, C. J. McClellan, O. Karni, J. v. d. Groep, T. F. Heinz, E. Pop, M. L. Brongersma, and K. C. Saraswat, High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation, Nano Letters, 21(8), 3443-3450 (2021)

10. A.I. Khan, H. Kwon*, R. Islam*, C. Perez, M.E. Chen, M. Asheghi, K.E. Goodson, H.-S. P. Wong, and E. Pop, Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi2Te3 Thermoelectric Interfacial Layer, Electron Device Letters, 41 (11), 1657 - 1660 (2020) (*Equal Contribution)

9. R. Islam, H. Li, P.-Y. Chen, W. Wan, H.-Y. Chen, B. Gao, H. Wu, S. Yu, K. Saraswat, and H.-S. P. Wong, Device and Materials Requirements for Neuromorphic Computing, Journal of Physics D: Applied Physics, 52, 113001 (2019) (invited)

8. A. Kumar, R. Islam, D. Pramanik, and K. C. Saraswat, On the Limit of Defect Doping in Nickel Oxide, Journal of Vacuum Science & Technology A, 37 (2), 021505 (2019)

7. R. Islam, and K. Saraswat, Limitation of Optical Enhancement in Ultra-thin Solar Cells Imposed by Contact Selectivity, Scientific Reports, 8, 8863 (2018)

6. M. Xue, R. Islam, Y. Chen, J. Chen, C.-Y. Lu, A. M. Pleus, C. Tae, K. Xu, Y. Liu, T. I. Kamins, K. C. Saraswat, and J. S. Harris, Carrier-selective Interlayer Materials for Silicon Solar Cell Contacts, Journal of Applied Physics, 123, 143101 (2018). (Equal Contribution)

5. M. Xue*, R. Islam*, A. C. Meng*, Z. Lyu, C.-Y. Lu, C. Tae, M. R. Braun, K. Zang, P. C. McIntyre, T. I. Kamins, K. C. Saraswat, and J. S. Harris, Contact Selectivity Engineering in 2 μm Thick Ultrathin c-Si Solar Cell using Transition-Metal Oxides Achieving Efficiency of 10.8%, ACS Applied Materials and Interfaces, 9 (48), 41863–41870 (2017). (*Equal Contribution)

4. N. El-Atab, T. G. Ulusoy, A. Ghobadi, J. Suh, R. Islam, A. K. Okyay, K. C. Saraswat, and A. Nayfeh, Cubic-phase Zirconia Nano-island Growth using Atomic Layer Deposition and Application in Low-power Charge-trapping Nonvolatile-memory Devices, Nanotechnology, 28, 44 (2017)

3. R. Islam, G. Chen, P. Ramesh, J. Suh, N. Fuchigami, D. Lee, K. A. Littau, K. Weiner, R. T. Collins, and K. C. Saraswat, Investigation of the Changes in Electronic Properties of Nickel Oxide (NiOx) Due to UV/Ozone Treatment, ACS Applied Materials and Interfaces, 9 (20), 17201–17207, (2017)

2. R. Islam, K. N. Nazif, and K. C. Saraswat, Si Heterojunction Solar Cells: A Simulation Study of the Design Issues, IEEE Transactions on Electron Devices, 63, 12 (2016)

1. R. Islam, G. Shine and K. C. Saraswat, Schottky Barrier Height Reduction for Holes by Fermi Level Depinning using Metal/Nickel Oxide/Silicon Contacts, Applied Physics Letters, 105, 18 (2014)

Conference Proceedings

9. R. Islam, M. McBriarty, M. Laudato, R. Clarke, S. Hoang, C. Chen, G. Panaman, K. Littau, Tuning Coercive Field and Polarization in Inherently Ferroelectric HZO Film Deposited using HfD-04 and ZrD-04, 21st International Conference on Atomic Layer Deposition, Virtual Meeting, June 2021

8. M. Xue, R. Islam, J. Chen, Z. Lyu, Y. Chen, D. DeWitt, A. Pleus, C. Tae, C.-Y. Lu, K. Zhang, J. Jia, Y. Huo, T. Kamins, K. Saraswat, J. Harris, Ultra-Thin Crystalline Silicon Solar Cells with Nickel Oxide Interlayer as Hole-selective Contact, 43rd IEEE Photovoltaic Specialist Conference, Portland, OR, June 2016

7. R. Islam, K. N. Nazif, K. Saraswat, Optimization of Selective Contacts in Si Heterojunction Photovoltaic Cells Considering Fermi Level Pinning and Interface Passivation, 43rd IEEE Photovoltaic Specialist Conference, Portland, OR, June 2016

6. R. Islam, G. Chen, P. Ramesh, R. Collins, K. Saraswat, Resistivity Control of Nickel Oxide by Defect Doping Through UV/Ozone Treatment, MRS Spring Meeting, Phoenix, AZ, March 2016

5. R. Islam, N. Fuchigami, P. Ramesh, D. Lee, K. Littau, K. Weiner, K. Saraswat, Tuning Stoichiometry in Atomic Layer Deposited NiOx by Changing Deposition Temperature, MRS Spring Meeting, Phoenix, AZ, March 2016

4. P. Ramesh, R. Islam, D. Lee, K. Weiner, K. Saraswat, Control of Resistivity and Stoichiometry in Atomic Layer Deposited Titanium Dioxide Using Rapid Thermal Annealing, MRS Spring Meeting, Phoenix, AZ, March 2016

3. R. Islam, P. Ramesh, J. H. Nam and K. C. Saraswat, Nickel Oxide Carrier Selective Contacts for Silicon Solar Cells, 42th IEEE Photovoltaic Specialist Conference, New Orleans, LA, June 2015

2. S. Deshmukh, R. Islam, C. Chen, E. Yalon, K. C. Saraswat, E. Pop, Thermal Modeling of Metal Oxides for Highly Scaled Nanoscale RRAM, The 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, September 2015

1. R. Islam and K. C. Saraswat, Metal/Insulator/Semiconductor Carrier Selective Contacts for Photovoltaic Cells, 40th IEEE Photovoltaic Specialist Conference, Denver, CO, June 2014

Book Chapters

1. Z. Wang, S. Nasrin, R. Islam, A. Haque, and M. A. U. Karim, Emerging Memories and Their Applications in Neuromorphic Computing, Nanoelectronics: Physics, Materials and Devices, chapter 13, pp. 305-357, Elsevier ©2023, ISBN: 978-0-323-91832-9

Patents

3. R. Islam, M. Laudato, R. Waldman, Ferroelectric Tunnel Junction with Multilevel Switching, WO Patent. No. WO202300004379A1 (2023)

2. K. N. Nazif, R. Islam, J.-H. Park, K. C. Saraswat, Tandem Solar Cells Having a Top or Bottom Metal Chalcogenide Cell, US Patent No. 11588066 (2023)

1. A. I. Khan, E. Pop, R. Islam, H.-S. Philip Wong, K. E. Goodson, M. Asheghi, H. Kwon, Low-power Phase-change Memory Technology with Interfacial Thermoelectric Heating Enhancement, US Patent No. 17/498369 (2022)

Invited Talks

3. Device and Materials Requirement for Neuromorphic Computing, MRS Spring Meeting, Phoenix, AZ, May 2019

2. Improving Analong Switching in RRAM Through Thermal Engineering, Advanced Memory Device Laboratory, CEA-Leti, Grenoble, France, July 2018

1. Design of Metal Oxide Carrier Selective Contacts for Silicon Photovoltaics, Department of Physics and Astronomy Colloquium, San Francisco State University, CA, February 2017