Tarek Ameen

Tarek Ameen's Biography

Tarek Ameen received his BSc in Electronics and Electrical Communications from Cairo University, Giza, Egypt in 2009. Tarek also received his MSc in Engineering Physics from Cairo University in 2013 and he was awarded Best Engineering Thesis at Cairo University. In his masters, he has worked on modeling the absorption coefficient and the dark current of quantum dot infrared photodetectors (QDIPs).

From Aug. 2013, Tarek is a PhD student at Purdue University in Prof. Klimeck's group. He is currently a member of NEMO5 (Nano Electronics Modeling Tool) development team. Tarek has developed the Local band structure solver and Universal strain solver in NEMO5. He has also been involved in the development of TFET Eqneq module and Optical solvers in NEMO5.

In Klimeck's group, Tarek has been conducting research on many topics that have varied largely from optical quatum dots to ultrascaled transistors, here are some highlights:

  1. Studies of Universal strain behavior in self-assembled quantum dots.
    • Tuning the anharmonic atomistic strain parameters to better simulate quantum dots.
    • Atomistic strain simulations are acurate but quite expensive.
    • Analytic continuum solutions underestimate the strain but do not need computational resources.
    • Our group has discovered a universal behavior of the atomistic strain that has been exploited and it has been used to estimate the atomistic strain at no expanse.
  2. Local band structure
    • Effect of strain and alloyies on band edges inside the device.
  3. Engineering Optical absorption in quantum dots.
    • Universal strain can be used to predict band structure and effective mass of any QD given its material and dimensions.
    • An acurate effective mass simulation (<5% difference with Full Atomistic) can be performed with no computational cost.
  4. Potential of multlilayer phosphorene for Tunneling devices.
    • 2D TFETs have an optimum transport energy gap and effective mass for best projected performance.
    • Multi layer phophorene has anisotropic effective mass and a direct energy gap that is thickness dependent (0.3 - 1.5 eV).
    • Phosphorene (bilayer for ITRS 2020 -2030) is an ideal material for TFETs and is a strong candidate for beyond COMS era.
  5. Quantum transport of Nitride Hetero-structures (ON going).
    • Atomistic Quantum transport in Nitride diodes and Tunnel-FETs.