Journals (16)
"Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness"
IEEE Transactions on Electron Devices, June 2021, Vol. 68, No. 6, Pages 3104-3111;doi: 10.1109/TED.2021.30751902021Not Cited Yet
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"WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing"
Small, Vol. 15, Issue 14 (2019);doi:10.1002/smll.2019027702019Not Cited Yet
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"Theoretical study of strain-dependent optical absorption in doped Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
Beilstein Journal of Nanotechnology, 2018, 9, 1075–1084;doi:10.3762/bjnano.9.992018Not Cited Yet
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"Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs"
IEEE Transactions on Electron Devices, 2018, Vol. 65, No. 10, Pages 4614-4621;doi: 10.1109/TED.2018.28624082018Not Cited Yet
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"Sensitivity Challenge of Steep Transistors"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 65, NO. 4, APRIL 2018;doi:10.1109/TED.2018.28080402018Not Cited Yet
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"Complementary Black Phosphorus Tunneling Field-Effect Transistors"
ACS Nano, Publication Date (Web): December 18, 2018;doi: 10.1021/acsnano.8b064412018Not Cited Yet
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"Alloy Engineered Nitride Tunneling Field Effect Transistor: A solution for the challenge of heterojunction TFETs"
IEEE Transactions on Electron Devices, 2018 (Early Access);doi: 10.1109/TED.2018.28777532018Not Cited Yet
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"Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications"
IEEE Transactions on Nanotechnology, 2018, Vol. 17, No. 2, Pages 293-2982018Not Cited Yet
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"Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions"
IEEE Transactions on Electron Devices, Vol: 64, Issue: 6, Page(s): 2512 - 2518, June 2017;doi:10.1109/TED.2017.26906262017Not Cited Yet
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"A Multiscale Modeling of Triple-Heterojunction Tunneling FETs"
IEEE Transactions on Electron Devices, Volume: 64, Issue: 6, Pages: 2728 - 2735, June 2017;doi:10.1109/TED.2017.26906692017Not Cited Yet
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"Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene"
IEEE Electron Device Letters, Volume: 38, Issue: 1, Jan. 2017, Pages: 130 - 133;doi: 10.1109/LED.2016.26275382016Not Cited Yet
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"Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass"
Scientific Reports 6, Article number: 31501 ;doi: 10.1038/srep31501 (2016)2016Not Cited Yet
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"Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors"
Scientific Reports 6, Article number: 28515 (2016);doi:10.1038/srep285152016Not Cited Yet
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"Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots"
IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 52, no. 7, july 2016;doi:10.1109/JQE.2016.25739592015Not Cited Yet
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"Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
arXiv:1502.077262015Not Cited Yet
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"Dielectric Engineered Tunnel Field-Effect Transistor"
IEEE ELECTRON DEVICE LETTERS, vol. 36, Issue: 10, Page(s): 1097-1100, October, 2015;doi:10.1109/LED.2015.24741472015Not Cited Yet
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Proceedings (7)
"III-N heterostructure devices for low-power logic"
Proceedings of the Semiconductor Technology International Conference (CSTIC), 2017 China, Pages 1-3;doi:10.1109/CSTIC.2017.79197432017Not Cited Yet
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"Novel III-N heterostructure devices for low-power logic and more"
Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on(pp. 767-769). IEEE;doi:10.1109/NANO.2016.77513362016Not Cited Yet
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"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA;doi:10.1109/DRC.2016.75484242016Not Cited Yet
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"Engineering The Optical Transitions of Self-Assembled Quantum Dots"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Pages: 1 - 4;doi:10.1109/IWCE.2015.73019402015Not Cited Yet
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"Quantum dot lab: an online platform for quantum dot simulations"
International Workshop on Computational Electronics (IWCE), 2015, Page(s): 1 - 3;doi:10.1109/IWCE.2015.73019822015Not Cited Yet
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"Atomistic Tight Binding Simulations with Real Space Basis Functions: Optical Properties of Quantum Wells and Dots"
IWCE 2014, June 3-6, Paris, France2014Not Cited Yet
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"Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots"
14th IEEE International Conference on Nanotechnology, 18-21 Aug. 2014, Page(s): 921 - 924, Toronto, ON;doi: 10.1109/NANO.2014.69681372014Not Cited Yet
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Conferences (16)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
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"Optimizing the Device Structure of 2D Material Tunnel FETs"
TECHCON 2017, Renaissance Hotel in Austin, Texas, September 10-12, 201720170
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"III-N heterostructure devices for low-power logic"
2017 China Semiconductor Technology International Conference (CSTIC), Shanghai, China, March 12-13, 2017 20170
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"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA20160
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"The Influence Of Carrier Thermalization On The Performance Of Nitride Tunneling Hetero-Structures"
TECH CON 2016, Sept. 11 - Tuesday, Sept. 13, 2016, Renaissance Austin Hotel, Austin, TX, United States20160
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"Why Do We Need Novel Steep Transistors?"
TECH CON 2016, Sept. 11 - Tuesday, Sept. 13, 2016, Renaissance Austin Hotel, Austin, TX, United States20160
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"Novel III-N heterostructure devices for low-power logic and more"
2016 IEEE 16th International Conference on Environment and Electrical Engineering, Florence, Italy, 2016 20160
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"Atomistic modeling of 2D material devices"
US-EU workshop on 2D layered materials and devices, Arlington, Virginia, April 22, 201520160
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"Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5"
Progress In Electromagnetics Research Symposium (PIERS), August, 2016, Shanghai, China20160
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"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 201520150
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"Transport characteristics of Nitride TFETs: Ballistic versus scattering"
2015 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 & 13, 2015 , University of Notre Dame.20150
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"Quantum Dot Lab: An Online Platform for Quantum Dot Simulations"
The Second Annual nanoHUB User Conference, Purdue University on August 31 - September 1, 201520150
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"Quantum Dot Lab: An Online Platform for Quantum Dot Simulations"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA20150
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"Atomistic Tight-binding Modeling of III-Nitride Materials and Field Effect Transistors"
2014 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 - 14, 2014 , University of Notre Dame.20140
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"Optimization of the Anharmonic Strain Model to Capture Realistic Strain Distributions in Quantum Dots"
IEEE Nano, Toronto, 201420140
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