Publications

Articles Citing NEMO

• 24[A24] - [A_2016_2]

  Ankit Sharma, Ahmed Reza, Kaushik Roy,
  "Proposal of an Intrinsic-Source Broken-Gap Tunnel FET to Reduce Band-Tail Effects on Subthreshold Swing: A Simulation Study"
  IEEE Transactions on Electron Devices, Volume:6, Issue: 6, Page(s): 2597 - 2602; doi:10.1109/TED.2016.25530862016

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• 23[A23] - [A_2016_1]

  Ankit Sharma, Arun Akkala, Jaydeep , Kaushik Roy,
  "Source-Underlapped GaSb–InAs TFETs With Applications to Gain Cell Embedded DRAMs"
  IEEE Transactions on Electron Devices, Volume:63, Issue: 6, Page(s): 2563 - 2569; doi:10.1109/TED.2016.25556272016

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• 22[A11] - [A_2014_5]

  Bhupesh Bishnoi, Bahniman Ghosh,
  "p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs"
  Submitted on 17 Aug 2014; arXiv:1408.37932014

  arXiv

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• 21[A10] - [A_2014_4]

  Bhupesh Bishnoi, Bahniman Ghosh,
  "Ballistic quantum transport in L-shaped Vertical Halo-Implanted p+-GaSb/InAs n-TFETs"
  Submitted on 23 Aug 2014; arXiv:1408.54692014

  arXiv

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• 20[A9] - [A_2014_3]

  Bhupesh Bishnoi, Bahniman Ghosh,
  "2D full-band, Atomistic Quantum transport in L-shaped Vertical InSb/InAsn-TFETs"
  Submitted on 12 Aug 2014; arXiv:1408.26412014

  arXiv

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• 19[A8] - [A_2014_2]

  Bhupesh Bishnoi, Bahniman Ghosh,
  "3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors"
  Submitted on 26 Aug 2014; arXiv:1408.60032014

  arXiv

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• 18[A7] - [A_2014_1]

  F. Nutku,
  "Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriers"
  Journal of Computational Electronics, June 2014, Volume 13, Issue 2, pp 456-465; doi:10.1007/s10825-014-0556-12014

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• 17[A6] - [A_2013_3]

  Oskar Baumgartner, Zlatan Stanojevic, Klaus Schnass, Markus Karner, Hans Kosina,
  "VSP—a quantum-electronic simulation framework"
  Journal of Computational Electronics, December 2013, Volume 12, Issue 4, pp 701-721; doi:10.1007/s10825-013-0535-y2013

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• 16[A4] - [A_2013_2]

  J. Maassen, C. Jeong, A. Baraskar, Mark Rodwell, Mark Lundstrom,
  "Full band calculations of the intrinsic lower limit of contact resistivity"
  Appl. Phys. Lett. 102, 111605 (2013); doi:10.1063/1.47982382013

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• 15[A3] - [A_2013_1]

  Goud, A.A., Gupta, S.K, Choday, S.H, Roy, K.,
  "Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs"
  Device Research Conference (DRC), 2013 71st Annual, 23-26 June 2013, Notre Dame, IN; doi:10.1109/DRC.2013.66337882013

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• 14[A22] - [A_2012_5]

  Wayne Witzel, Rajib Rahman, Malcolm Carroll,
  "Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge"
  PHYSICAL REVIEW B 85, 205312 (2012); doi: 10.1103/PhysRevB.85.2053122012

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• 13[A18] - [A_2012_4]

  Rajib Rahman, Erik Nielsen, Richard Muller, Malcolm Carroll,
  "Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric"
  PHYSICAL REVIEW B 85, 125423 (2012); doi:10.1103/PhysRevB.85.1254232012

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• 12[A17] - [A_2012_3]

  A. Ferrari, G. Isella, Stefano Cecchi, M. Marcon, D. Chrastina, G. Trezzi, Franco Ciccacci,
  "Ge/SiGe heterostructures as emitters of polarized electrons"
  Journal of Applied Physics 111, 063916 (2012); doi: 10.1063/1.36982902012

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• 11[A16] - [A_2012_2]

  Muhammad Usman,
  "Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots"
  PHYSICAL REVIEW B 86, 155444 (2012); doi:/10.1103/PhysRevB.86.1554442012

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• 10[A5] - [A_2012_1]

  R. Bowen, Ryan Hatcher,
  "Physical insight into reduced surface roughness scattering in strained silicon inversion layers"
  Appl. Phys. Lett. 101, 073504 (2012); doi:10.1063/1.47427722012

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• 9[A20] - [A_2011_4]

  K. Yalavarthi, V. Gaddipati, Shaikh Ahmed,
  "Internal fields in InN/GaN quantum dots: Geometry dependence and competing effects on the electronic structure"
  Physica E 43 (2011) 1235–1239; doi:10.1016/j.physe.2011.02.0072011

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• 8[A12] - [A_2011_3]

  Federico Bottegoni, Stefano Cecchi, Franco Ciccacci,
  "Spin polarized photoemission from strained Ge epilayers"
  Applied Physics Letters 98, 242107 (2011); doi: 10.1063/1.35994932011

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• 7[A2] - [A_2011_2]

  Mahesh Neupane, Roger Lake, Rajib Rahman,
  "Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores"
  J. Appl. Phys. 112, 024326 (2012) ; doi:10.1063/1.47397152012

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• 6[A1] - [A_2011_1]

  Mahesh Neupane, Roger Lake, Rajib Rahman,
  "Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals"
  J. Appl. Phys. 110, 074306 (2011); doi: 10.1063/1.36429702011

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• 5[A21] - [A_2010_3]

  Peizhen Yang, W. Lau, Seow Lai, V. Lo, L. Toh, Jacob Wang, S. Siah, L. Chan,
  "Mechanism for improvement of n-channel metal-oxide-semiconductor transistors by tensile stress"
  Journal of Applied Physics 108, 034506 (2010); doi: 10.1063/1.34478432010

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• 4[A19] - [A_2010_2]

  Martha Prada, R.H. Blick, Robert Joynt,
  "Spin relaxation in isotopically purified silicon quantum dots"
  Physica E 42 (2010) 639–642; doi:10.1016/j.physe.2009.06.0572010

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• 3[A15] - [A_2010_1]

  Shaikh Ahmed, Sharnali Islam, Shareef Mohammed,
  "Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations"
  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 1, JANUARY 2010; doi:10.1109/TED.2009.20355312010

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• 2[A14] - [A_2008_1]

  Raseong Kim, Mark Lundstrom,
  "Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs"
  IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008; doi:10.1109/TNANO.2008.9201962008

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• 1[A13] - [A_2006_1]

  Ali Khakifirooz, Dimitri Antoniadis,
  "Scalability of Hole Mobility Enhancement in Biaxially Strained Ultrathin Body SOI"
  IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 5, MAY 2006; doi:10.1109/LED.2006.8738772006

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