Publications

Articles Citing NEMO

  • 24[A24] - [A_2016_2]

    Ankit Sharma, Kaushik Roy, Ahmed Reza,
    "Proposal of an Intrinsic-Source Broken-Gap Tunnel FET to Reduce Band-Tail Effects on Subthreshold Swing: A Simulation Study"
    IEEE Transactions on Electron Devices, Volume:6, Issue: 6, Page(s): 2597 - 2602; doi:10.1109/TED.2016.25530862016

    0

    0

  • 23[A23] - [A_2016_1]

    Ankit Sharma, Arun Akkala, Jaydeep , Kaushik Roy,
    "Source-Underlapped GaSb–InAs TFETs With Applications to Gain Cell Embedded DRAMs"
    IEEE Transactions on Electron Devices, Volume:63, Issue: 6, Page(s): 2563 - 2569; doi:10.1109/TED.2016.25556272016

    0

    0

  • 22[A11] - [A_2014_5]

    Bhupesh Bishnoi, Bahniman Ghosh,
    "p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs"
    Submitted on 17 Aug 2014; arXiv:1408.37932014

    0

    0

  • 21[A10] - [A_2014_4]

    Bhupesh Bishnoi, Bahniman Ghosh,
    "Ballistic quantum transport in L-shaped Vertical Halo-Implanted p+-GaSb/InAs n-TFETs"
    Submitted on 23 Aug 2014; arXiv:1408.54692014

    0

    0

  • 20[A9] - [A_2014_3]

    Bhupesh Bishnoi, Bahniman Ghosh,
    "2D full-band, Atomistic Quantum transport in L-shaped Vertical InSb/InAsn-TFETs"
    Submitted on 12 Aug 2014; arXiv:1408.26412014

    0

    0

  • 19[A8] - [A_2014_2]

    Bhupesh Bishnoi, Bahniman Ghosh,
    "3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors"
    Submitted on 26 Aug 2014; arXiv:1408.60032014

    0

    0

  • 18[A7] - [A_2014_1]

    F. Nutku,
    "Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriers"
    Journal of Computational Electronics, June 2014, Volume 13, Issue 2, pp 456-465; doi:10.1007/s10825-014-0556-12014

    0

    0

  • 17[A6] - [A_2013_3]

    Hans Kosina, Oskar Baumgartner, Zlatan Stanojevic, Klaus Schnass, Markus Karner,
    "VSP—a quantum-electronic simulation framework"
    Journal of Computational Electronics, December 2013, Volume 12, Issue 4, pp 701-721; doi:10.1007/s10825-013-0535-y2013

    0

    0

  • 16[A4] - [A_2013_2]

    Mark Lundstrom, Mark Rodwell, J. Maassen, C. Jeong, A. Baraskar,
    "Full band calculations of the intrinsic lower limit of contact resistivity"
    Appl. Phys. Lett. 102, 111605 (2013); doi:10.1063/1.47982382013

    0

    0

  • 15[A3] - [A_2013_1]

    Goud, A.A., Gupta, S.K, Choday, S.H, Roy, K.,
    "Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs"
    Device Research Conference (DRC), 2013 71st Annual, 23-26 June 2013, Notre Dame, IN; doi:10.1109/DRC.2013.66337882013

    0

    0

  • 14[A22] - [A_2012_5]

    Rajib Rahman, Malcolm Carroll, Wayne Witzel,
    "Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge"
    PHYSICAL REVIEW B 85, 205312 (2012); doi: 10.1103/PhysRevB.85.2053122012

    0

    0

  • 13[A18] - [A_2012_4]

    Rajib Rahman, Richard Muller, Malcolm Carroll, Erik Nielsen,
    "Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric"
    PHYSICAL REVIEW B 85, 125423 (2012); doi:10.1103/PhysRevB.85.1254232012

    0

    0

  • 12[A17] - [A_2012_3]

    Stefano Cecchi, Franco Ciccacci, A. Ferrari, G. Isella, M. Marcon, D. Chrastina, G. Trezzi,
    "Ge/SiGe heterostructures as emitters of polarized electrons"
    Journal of Applied Physics 111, 063916 (2012); doi: 10.1063/1.36982902012

    0

    0

  • 11[A16] - [A_2012_2]

    Muhammad Usman,
    "Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots"
    PHYSICAL REVIEW B 86, 155444 (2012); doi:/10.1103/PhysRevB.86.1554442012

    0

    0

  • 10[A5] - [A_2012_1]

    R. Bowen, Ryan Hatcher,
    "Physical insight into reduced surface roughness scattering in strained silicon inversion layers"
    Appl. Phys. Lett. 101, 073504 (2012); doi:10.1063/1.47427722012

    0

    0

  • 9[A20] - [A_2011_4]

    Shaikh Ahmed, K. Yalavarthi, V. Gaddipati,
    "Internal fields in InN/GaN quantum dots: Geometry dependence and competing effects on the electronic structure"
    Physica E 43 (2011) 1235–1239; doi:10.1016/j.physe.2011.02.0072011

    0

    0

  • 8[A12] - [A_2011_3]

    Federico Bottegoni, Stefano Cecchi, Franco Ciccacci,
    "Spin polarized photoemission from strained Ge epilayers"
    Applied Physics Letters 98, 242107 (2011); doi: 10.1063/1.35994932011

    0

    0

  • 7[A2] - [A_2011_2]

    Rajib Rahman, Roger Lake, Mahesh Neupane,
    "Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores"
    J. Appl. Phys. 112, 024326 (2012) ; doi:10.1063/1.47397152012

    0

    0

  • 6[A1] - [A_2011_1]

    Rajib Rahman, Roger Lake, Mahesh Neupane,
    "Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals"
    J. Appl. Phys. 110, 074306 (2011); doi: 10.1063/1.36429702011

    0

    0

  • 5[A21] - [A_2010_3]

    Peizhen Yang, W. Lau, Seow Lai, V. Lo, L. Toh, Jacob Wang, S. Siah, L. Chan,
    "Mechanism for improvement of n-channel metal-oxide-semiconductor transistors by tensile stress"
    Journal of Applied Physics 108, 034506 (2010); doi: 10.1063/1.34478432010

    0

    0

  • 4[A19] - [A_2010_2]

    Martha Prada, Robert Joynt, R.H. Blick,
    "Spin relaxation in isotopically purified silicon quantum dots"
    Physica E 42 (2010) 639–642; doi:10.1016/j.physe.2009.06.0572010

    0

    0

  • 3[A15] - [A_2010_1]

    Shaikh Ahmed, Sharnali Islam, Shareef Mohammed,
    "Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations"
    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 1, JANUARY 2010; doi:10.1109/TED.2009.20355312010

    0

    0

  • 2[A14] - [A_2008_1]

    Mark Lundstrom, Raseong Kim,
    "Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs"
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008; doi:10.1109/TNANO.2008.9201962008

    0

    0

  • 1[A13] - [A_2006_1]

    Ali Khakifirooz, Dimitri Antoniadis,
    "Scalability of Hole Mobility Enhancement in Biaxially Strained Ultrathin Body SOI"
    IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 5, MAY 2006; doi:10.1109/LED.2006.8738772006

    0

    0