24[A24] - [A_2016_2]
Ankit Sharma, Ahmed Reza, Kaushik Roy,
"Proposal of an Intrinsic-Source Broken-Gap Tunnel FET to Reduce Band-Tail Effects on Subthreshold Swing: A Simulation Study"
IEEE Transactions on Electron Devices, Volume:6, Issue: 6, Page(s): 2597 - 2602; doi:10.1109/TED.2016.25530862016
0
0
23[A23] - [A_2016_1]
Ankit Sharma, Arun Akkala, Jaydeep , Kaushik Roy,
"Source-Underlapped GaSb–InAs TFETs With Applications to Gain Cell Embedded DRAMs"
IEEE Transactions on Electron Devices, Volume:63, Issue: 6, Page(s): 2563 - 2569; doi:10.1109/TED.2016.25556272016
0
0
22[A11] - [A_2014_5]
Bhupesh Bishnoi, Bahniman Ghosh,
"p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs"
Submitted on 17 Aug 2014; arXiv:1408.37932014
arXiv
0
0
21[A10] - [A_2014_4]
Bhupesh Bishnoi, Bahniman Ghosh,
"Ballistic quantum transport in L-shaped Vertical Halo-Implanted p+-GaSb/InAs n-TFETs"
Submitted on 23 Aug 2014; arXiv:1408.54692014
arXiv
0
0
20[A9] - [A_2014_3]
Bhupesh Bishnoi, Bahniman Ghosh,
"2D full-band, Atomistic Quantum transport in L-shaped Vertical InSb/InAsn-TFETs"
Submitted on 12 Aug 2014; arXiv:1408.26412014
arXiv
0
0
19[A8] - [A_2014_2]
Bhupesh Bishnoi, Bahniman Ghosh,
"3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors"
Submitted on 26 Aug 2014; arXiv:1408.60032014
arXiv
0
0
18[A7] - [A_2014_1]
F. Nutku,
"Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriers"
Journal of Computational Electronics, June 2014, Volume 13, Issue 2, pp 456-465; doi:10.1007/s10825-014-0556-12014
0
0
17[A6] - [A_2013_3]
Oskar Baumgartner, Zlatan Stanojevic, Klaus Schnass, Markus Karner, Hans Kosina,
"VSP—a quantum-electronic simulation framework"
Journal of Computational Electronics, December 2013, Volume 12, Issue 4, pp 701-721; doi:10.1007/s10825-013-0535-y2013
0
0
16[A4] - [A_2013_2]
J. Maassen, C. Jeong, A. Baraskar, Mark Rodwell, Mark Lundstrom,
"Full band calculations of the intrinsic lower limit of contact resistivity"
Appl. Phys. Lett. 102, 111605 (2013); doi:10.1063/1.47982382013
0
0
15[A3] - [A_2013_1]
Goud, A.A., Gupta, S.K, Choday, S.H, Roy, K.,
"Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs"
Device Research Conference (DRC), 2013 71st Annual, 23-26 June 2013, Notre Dame, IN; doi:10.1109/DRC.2013.66337882013
0
0
14[A22] - [A_2012_5]
Wayne Witzel, Rajib Rahman, Malcolm Carroll,
"Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge"
PHYSICAL REVIEW B 85, 205312 (2012); doi: 10.1103/PhysRevB.85.2053122012
0
0
13[A18] - [A_2012_4]
Rajib Rahman, Erik Nielsen, Richard Muller, Malcolm Carroll,
"Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric"
PHYSICAL REVIEW B 85, 125423 (2012); doi:10.1103/PhysRevB.85.1254232012
0
0
12[A17] - [A_2012_3]
A. Ferrari, G. Isella, Stefano Cecchi, M. Marcon, D. Chrastina, G. Trezzi, Franco Ciccacci,
"Ge/SiGe heterostructures as emitters of polarized electrons"
Journal of Applied Physics 111, 063916 (2012); doi: 10.1063/1.36982902012
0
0
11[A16] - [A_2012_2]
Muhammad Usman,
"Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots"
PHYSICAL REVIEW B 86, 155444 (2012); doi:/10.1103/PhysRevB.86.1554442012
0
0
10[A5] - [A_2012_1]
R. Bowen, Ryan Hatcher,
"Physical insight into reduced surface roughness scattering in strained silicon inversion layers"
Appl. Phys. Lett. 101, 073504 (2012); doi:10.1063/1.47427722012
0
0
9[A20] - [A_2011_4]
K. Yalavarthi, V. Gaddipati, Shaikh Ahmed,
"Internal fields in InN/GaN quantum dots: Geometry dependence and competing effects on the electronic structure"
Physica E 43 (2011) 1235–1239; doi:10.1016/j.physe.2011.02.0072011
0
0
8[A12] - [A_2011_3]
Federico Bottegoni, Stefano Cecchi, Franco Ciccacci,
"Spin polarized photoemission from strained Ge epilayers"
Applied Physics Letters 98, 242107 (2011); doi: 10.1063/1.35994932011
0
0
7[A2] - [A_2011_2]
Mahesh Neupane, Roger Lake, Rajib Rahman,
"Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores"
J. Appl. Phys. 112, 024326 (2012) ; doi:10.1063/1.47397152012
0
0
6[A1] - [A_2011_1]
Mahesh Neupane, Roger Lake, Rajib Rahman,
"Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals"
J. Appl. Phys. 110, 074306 (2011); doi: 10.1063/1.36429702011
0
0
5[A21] - [A_2010_3]
Peizhen Yang, W. Lau, Seow Lai, V. Lo, L. Toh, Jacob Wang, S. Siah, L. Chan,
"Mechanism for improvement of n-channel metal-oxide-semiconductor transistors by tensile stress"
Journal of Applied Physics 108, 034506 (2010); doi: 10.1063/1.34478432010
0
0
4[A19] - [A_2010_2]
Martha Prada, R.H. Blick, Robert Joynt,
"Spin relaxation in isotopically purified silicon quantum dots"
Physica E 42 (2010) 639–642; doi:10.1016/j.physe.2009.06.0572010
0
0
3[A15] - [A_2010_1]
Shaikh Ahmed, Sharnali Islam, Shareef Mohammed,
"Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 1, JANUARY 2010; doi:10.1109/TED.2009.20355312010
0
0
2[A14] - [A_2008_1]
Raseong Kim, Mark Lundstrom,
"Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs"
IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008; doi:10.1109/TNANO.2008.9201962008
0
0
1[A13] - [A_2006_1]
Ali Khakifirooz, Dimitri Antoniadis,
"Scalability of Hole Mobility Enhancement in Biaxially Strained Ultrathin Body SOI"
IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 5, MAY 2006; doi:10.1109/LED.2006.8738772006
0
0
