Seung Hyun Park's Biography
Seung Hyun Park received his BSEE degree from Purdue University. Then, he joined professor Gerhard Klimeck’s group in Aug, 2007. His research focuses on nano-scale device physics and computational modeling.
- Quantum simulation of advanced transistors.
- Performance comparisons of III-V and strained-Si in planar FETs and non-planar FinFETs at ultra-short gate length (12nm/8nm) [OMEN].
- Contact-to-channel resistance modeling and analysis of InAs high electron mobility transistor (HEMT) [NEMO5]
- Modeling and analysis of nano-scale Si transistors at
ultra-short gate length under 8nm: What is different below 10nm? [OMEN]
- Scaling effect on specific contact resistivity in nanoscale
metal-semiconductor contact [OMEN]
- Surface orientation engineering of idealized III-V FET for high current densities and thin inversion layers [OMEN] and [NEMO5]
- Benchmark under-the-barrier model as an extension of the top-of-the-barrier model for nanoscale transistors [NEMO5]
- Enhance an existing device modeling tool (nanoFET) on nanoHUB.org [NEMO5]
- Electronic structure of donors from tight-binding method.
Seung Hyun Park's PagesBiography Publications III-V and Si FinFETs MS Contact Resistivity Mapping Donor Wavefunctions Contact Resistance Modeling Coherent Electron Transport by Adiabatic Passage (CTAP) Spin-Orbit Stark Effect in Donors Charge Qubit Control Orbital Stark Effect in Donors D- Modeling for As Donors