Seung Hyun Park

Seung Hyun Park received his BSEE degree from Purdue University. Then, he joined professor Gerhard Klimeck’s group in Aug, 2007. His research focuses on nano-scale device physics and computational modeling.

Research Topic

• Quantum simulation of advanced transistors.
  • Performance comparisons of III-V and strained-Si in planar FETs and non-planar FinFETs at ultra-short gate length (12nm/8nm) [OMEN].
  • Contact-to-channel resistance modeling and analysis of InAs high electron mobility transistor (HEMT) [NEMO5]
  • Modeling and analysis of nano-scale Si transistors at
    ultra-short gate length under 8nm: What is different below 10nm? [OMEN]
  • Scaling effect on specific contact resistivity in nanoscale
    metal-semiconductor contact [OMEN]
  • Surface orientation engineering of idealized III-V FET for high current densities and thin inversion layers [OMEN] and [NEMO5]
  • Benchmark under-the-barrier model as an extension of the top-of-the-barrier model for nanoscale transistors [NEMO5]
  • Enhance an existing device modeling tool (nanoFET) on nanoHUB.org [NEMO5]
• Electronic structure of donors from tight-binding method.
  • Hyperfine interaction mapping of donor electron wave function deformations [NEMO-3D].
  • Adiabatic coherent electron transport in triple donor systems [NEMO-3D].
  • Stark tuning of the charge states of a two-donor molecule
    in silicon [NEMO-3D]