Impurities

Charge Qubit Control

Objective:

  • Establish control & design parameters for charge qubits
  • Determine the range of feasible surface and barrier gate voltages
  • Investigate effects of excited states

Approach:

  • Surface and Barrier gates modeled by TCAD potentials
  • Coupled impurity potential gives rise to molecular states
  • Surface gates create left/right localized states

Results/Impact:

  • Smooth voltage control is shown for most configurations
  • At higher voltages, the excited states mingle with the lowest states, limiting the range of operating voltages.
  • Simulation tool for charge qubit experiments & data analysis.

Group member involved:

Impurities

Impurities Home Hyperfine Interaction (HF) Mapping Donor Wavefunctions Coherent Electron Transport by Adiabatic Passage (CTAP) Spin-Orbit Stark Effect in Donors Charge Qubit Control Orbital Stark Effect in Donors D- Modeling for As Donors Metrology for a Donor Cluster Spin lifetimes for donors in Si