Ferroelectric Technology

Steep-switching devices have garnered an immense interest due to the possibilities of beating the Boltzmann’s limit of 60mV/decade sub-threshold swing (at room temperature) associated with conventional transistors. However, these technologies have their own overheads, due to which their benefits at the circuit/system level are not entirely clear. The goal of this research program is to thoroughly analyze the circuit implications of the steep switching technologies and develop novel circuit design techniques to harness their full potential. Definition of the material and device design space taking into consideration the cir1cuit requirements is a key component of this research.