DRC 2018
DRC 2018
Ahmedullah Aziz presents his work on "A Three-Terminal Edge-Triggered Mott Switch" and "Cockcroft-Walton Multiplier based on Unipolar Ag/HfO2/Pt Threshold Switch"
Abstract (1): We demonstrate a novel edge-triggered (ET) three-terminal Mott switch that leverages the displacement current induced by the switching of the gate voltage pulse to trigger an IMT in the channel. The design overcomes a long-standing challenge of realizing a three-terminal switch due to the absence of field-effect induced IMT in VO 2 . The ET Mott switch also enables isolation between the input & the output (at steady state), and facilitates reduction in the effective trigger voltage in comparison to the two-terminal configuration. We show using simulations that these properties can be exploited to enable a BEOL-compatible 3T selector for MTJ-based cross-point memory, showing higher cell TMR, as well as 45% & 40% lower sneak-path current & power, respectively.
Abstract: Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. TS, a recent inclusion in this group, was reported to have high selectivity and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on . The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt transitions and (d) unipolar conduction .