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Objective:
- Engineering exchange energy in donor based double quantum dots in silicon.
- Find optimized exchange-control scheme and donor dot systems.
Approach:
- Atomistic tight binding approach for solving donor wavefuntions.
- A full configuration interaction (FCI) method for electron-electron exchange calculation, which accurately captures exchange and correlations.
- A detuning-field scheme to tune exchange energy.
Results/Impact:
- Exchange oscillation is mitigated in asymmetric 2P-1P systems.
- A 2P-1P system with inter-qubit separation of 15 nm provides over 5 orders of magnitude tunability.
- FCI technique allows anaylizing two-electron enery spectra, weights of slater-determinants as well as two-electron density where spin-blockade is observed.
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