Journals (60)
"Bulk and sub-surface donor bound excitons in silicon under electric fields"
arXiv:1510.000652015Not Cited Yet
0
0
"WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing"
Small, Vol. 15, Issue 14 (2019);doi:10.1002/smll.2019027702019Not Cited Yet
0
0
"Theoretical study of strain-dependent optical absorption in doped Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
Beilstein Journal of Nanotechnology, 2018, 9, 1075–1084;doi:10.3762/bjnano.9.992018Not Cited Yet
0
0
"Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability"
Physical Review B 97, 241401 (2018);doi: 10.1103/PhysRevB.97.2414012018Not Cited Yet
0
0
"Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs"
IEEE Transactions on Electron Devices, 2018, Vol. 65, No. 10, Pages 4614-4621;doi: 10.1109/TED.2018.28624082018Not Cited Yet
0
0
"Optimization of edge state velocity in the integer quantum Hall regime"
Physical Review B 97, 085302 (2018);doi: 10.1103/PhysRevB.97.0853022018Not Cited Yet
0
0
"Sensitivity Challenge of Steep Transistors"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 65, NO. 4, APRIL 2018;doi:10.1109/TED.2018.28080402018Not Cited Yet
0
0
"Two-electron states of a group V donor in silicon from atomistic full configuration interaction"
Phys. Rev. B 97, 195301 – Published 2 May 2018;doi: 10.1103/PhysRevB.97.1953012018Not Cited Yet
0
0
"Complementary Black Phosphorus Tunneling Field-Effect Transistors"
ACS Nano, Publication Date (Web): December 18, 2018;doi: 10.1021/acsnano.8b064412018Not Cited Yet
0
0
"Alloy Engineered Nitride Tunneling Field Effect Transistor: A solution for the challenge of heterojunction TFETs"
IEEE Transactions on Electron Devices, 2018 (Early Access);doi: 10.1109/TED.2018.28777532018Not Cited Yet
0
0
"Switching Mechanism and the Scalability of vertical-TFETs"
, 2018, Vol. 65, No. 7, Pages 3065-30682018Not Cited Yet
0
0
"Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications"
IEEE Transactions on Nanotechnology, 2018, Vol. 17, No. 2, Pages 293-2982018Not Cited Yet
0
0
"Transport in vertically stacked hetero-structures from 2D materials"
IOP Journal of Physics: Conf. Series 864 (2017) 012053;doi:10.1088/1742-6596/864/1/0120532017Not Cited Yet
0
0
"Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions"
IEEE Transactions on Electron Devices, Vol: 64, Issue: 6, Page(s): 2512 - 2518, June 2017;doi:10.1109/TED.2017.26906262017Not Cited Yet
0
0
"A Multiscale Modeling of Triple-Heterojunction Tunneling FETs"
IEEE Transactions on Electron Devices, Volume: 64, Issue: 6, Pages: 2728 - 2735, June 2017;doi:10.1109/TED.2017.26906692017Not Cited Yet
0
0
"All-electrical control of donor-bound electron spin qubits in silicon"
Nat Nanotechnol. 2017 Oct;12(10):958-962; doi: 10.1038/nnano.2017.154. Epub 2017 Aug 14.2017Not Cited Yet
0
0
"Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene"
IEEE Electron Device Letters, Volume: 38, Issue: 1, Jan. 2017, Pages: 130 - 133;doi: 10.1109/LED.2016.26275382016Not Cited Yet
0
0
"Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision"
Nature Nanotechnology 11, 763–768 (2016);doi:10.1038/nnano.2016.832016Not Cited Yet
0
0
"Highly tunable exchange in donor qubits in silicon"
npj Quantum Information 2, 16008 (2016);doi:10.1038/npjqi.2016.82016Not Cited Yet
0
0
"Quantum simulation of the Hubbard model with dopant atoms in silicon"
Nature Communications 7, 11342, 20 April 2016;doi:10.1038/ncomms113422016Not Cited Yet
0
0
"Characterizing Si:P quantum dot qubits with spin resonance techniques"
Scientific Reports 6, Article number: 31830 (2016);doi:10.1038/srep318302016Not Cited Yet
0
0
"Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass"
Scientific Reports 6, Article number: 31501 ;doi: 10.1038/srep31501 (2016)2016Not Cited Yet
0
0
"Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors"
Scientific Reports 6, Article number: 28515 (2016);doi:10.1038/srep285152016Not Cited Yet
0
0
"Design Rules for High Performance Tunnel Transistors from 2D Materials"
IEEE Journal of Electron Device Society (J-EDS), Volume: 4, Issue: 5, Page(s): 260 - 265, Sept. 2016 ;doi:10.1109/JEDS.2016.25682192016Not Cited Yet
0
0
"From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling"
IEEE Transactions on Electron Devices, Volume:63 , Issue: 7, July 2016;doi:10.1109/TED.2016.25655822016Not Cited Yet
0
0
"Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions"
PHYSICAL REVIEW B 94, 045314 (2016), published 25 July 2016;doi:10.1103/PhysRevB.94.0453142016Not Cited Yet
0
0
"Silicon quantum processor with robust long-distance qubit couplings"
Nature Communications 8, Article number: 450 (2017);doi:10.1038/s41467-017-00378-x2015Not Cited Yet
0
0
"Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET"
IEEE Journal of the Electron Devices Society, Volume:4 ,Issue: 3, Page(s): 124 - 128, May 2016;doi:10.1109/JEDS.2016.25399192015Not Cited Yet
0
0
"Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots"
IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 52, no. 7, july 2016;doi:10.1109/JQE.2016.25739592015Not Cited Yet
0
0
"Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
arXiv:1502.077262015Not Cited Yet
0
0
"Interface-induced heavy-hole/light-hole splitting of acceptors in silicon"
Appl. Phys. Lett. 106, 203110 (2015);doi:10.1063/1.492164020150
3
"Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors"
IEEE Journal of Exploratory Solid-State Computational Devices and Circuits, Volume:1, Pages: 28 - 34, Dec. 2015;doi:10.1109/JXCDC.2015.242643320150
5
"Tunnel field effect transistors in two dimensional transition metal dichalcogenides"
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, Page(s):12-18 , 14 April 2015 ;doi:10.1109/JXCDC.2015.24230962015Not Cited Yet
0
0
"Electrically controlling single-spin qubits in a continuous microwave field"
Science Advances 10 Apr 2015: Vol. 1 no. 3 e1500022;doi:10.1126/sciadv.150002220150
4
"Can Homojunction Tunnel FETs Scale Below 10nm?"
IEEE ELECTRON DEVICE LETTERS, vol. 37, Issue: 1, Page(s): 115-118, January, 2016;doi:10.1109/LED.2015.25018202015Not Cited Yet
0
0
"Electrically Tunable Bandgaps in Bilayer MoS2"
Nano Lett., 2015, 15 (12), pp 8000–80072015Not Cited Yet
0
0
"A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations"
Journal of Applied Physics, 118, 164305 (2015);doi:10.1063/1.4934682A2015Not Cited Yet
0
0
"Dielectric Engineered Tunnel Field-Effect Transistor"
IEEE ELECTRON DEVICE LETTERS, vol. 36, Issue: 10, Page(s): 1097-1100, October, 2015;doi:10.1109/LED.2015.24741472015Not Cited Yet
0
0
"Strain and electric field control of hyperfine interactions for donor spin qubits in silicon"
PHYSICAL REVIEW B 91, 245209 (2015), Published 25 June 2015;doi:10.1103/PhysRevB.91.24520920150
1
"Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory"
Journal of Physics: Condensed Matter, 27 (2015) 154207 (7pp);doi:10.1088/0953-8984/27/15/15420720150
3
"Scaling Theory of Electrically Doped 2D Transistors"
IEEE Electron Device Letters, vol. 36, Issue: 7, Page(s): 726-728, July 2015;doi:10.1109/LED.2015.243635620150
2
"Spin blockade and exchange in Coulomb-confined silicon double quantum dots"
Nature Nanotechnology 9, 430–435 (2014), Published online 13 April 2014;doi:10.1038/nnano.2014.6320140
32
"Spatially resolving valley quantum interference of a donor in silicon"
Nature Materials 13, 605–610 (2014), Published online 06 April 2014;doi:10.1038/nmat394120140
16
"Coherent Control of a Single Silicon-29 Nuclear Spin Qubit"
Phys. Rev. Lett. 113, 246801, Published 9 December 2014;doi:10.1103/PhysRevLett.113.24680120140
3
"Spin-lattice relaxation times of single donors and donor clusters in silicon"
Phys. Rev. Lett. 113, 246406, Published 11 December 2014;doi:10.1103/PhysRevLett.113.24640620140
3
"Non-invasive spatial metrology of single-atom devices"
Nano Lett.,Published April 9, 2013, 13 (5), pp 1903–1909 ;doi:10.1021/nl303863s2013Not Cited Yet
0
0
"Engineered valley-orbit splittings in quantum confined nanostructures in silicon"
Phys. Rev. B 83, 195323;doi:10.1103/PhysRevB.83.1953232011Cited by 23 / 10 Downloads
10
23
"Stark tuning of the charge states of a two-donor molecule in silicon"
Nanotechnology 22 225202;doi:10.1088/0957-4484/22/22/2252022011Cited by 8 / 2 Downloads
2
8
"Lifetime enhanced transport in silicon due to spin and valley blockade"
Phys. Rev. Lett. 107, 136602 – Published 19 September 2011;doi:10.1103/PhysRevLett.107.1366022011Cited by 20 / 5 Downloads
5
20
"Electric field reduced charging energies and two-electron bound excited states of single donors in silicon"
PHYSICAL REVIEW B 84, 115428 (2011)2011Cited by 15 / 7 Downloads
7
15
"Coherent electron transport by adiabatic passage in an imperfect donor chain"
Phys. Rev. B. (2010) Vol. 55, Issue 3;doi:10.1103/PhysRevB.82.1553152010Cited by 10 / 45 Downloads
45
10
"Mapping donor electron wave function deformations at sub-Bohr orbit resolution"
Phys. Rev. Lett., Vol. 103, 106802 (2009);doi:10.1103/PhysRevLett.103.1068022009Cited by 9 / 21 Downloads
21
9
"Atomistic simulations of adiabatic coherent electron transport in triple donor systems"
Phys. Rev. B, Vol. 80, 035302 (2009);doi:10.1103/PhysRevB.80.0353022009Cited by 24 / 98 Downloads
98
24
"Orbital Stark effect and quantum confinement transition of donors in silicon"
Phys. Rev. B, Vol. 80, 098936 (2009) arXiv 0904.4281 ;doi:10.1103/PhysRevB.80.1653142009Cited by 54 / 89 Downloads
89
54
"Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors"
Physical Review B, Vol. 80 134935 (2009);doi:10.1103/PhysRevB.80.1553012009Cited by 2 / 16 Downloads
16
2
"Eigenvalue Solvers for Atomistic Simulations of Electronic Structures with NEMO-3D"
Journal of Computational Electronics, 2008, Vol. 7, pg. 297-300 (2008);doi : 10.1007/s10825-008-0223-52008Cited by 6 / 282 Downloads
282
6
"Multimillion Atom Simulations with NEMO 3-D"
Springer Encyclopedia for Complexity, pp 5745-5783, 2008, Published 2009;doi:10.1007/978-0-387-30440-3_3432008Cited by 10 / 130 Downloads
130
10
"Gate induced quantum confinement transition of a single dopant atom in a Si FinFET"
Nature Physics, Vol. 4, pg. 656 (2008) ;doi : 10.1038/nphys9942008Cited by 64 / 286 Downloads
286
64
"High precision quantum control of single donor spins in Si"
Physical Review Letters, Vol 99, pg 036403 (2007) ;doi : 10.1103/PhysRevLett.99.0364032007Cited by 1 / 84 Downloads
84
1
"Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I - Models and Benchmarks"
IEEE Transactions on Electron Devices, Vol. 54, Issue 9, Page(s):2079 - 2089, Sept. 2007, (INVITED) Special Issue on Nanoelectronic Device Modeling;doi : 10.1109/TED.2007.9028792007Cited by 165 / 324 Downloads
324
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Proceedings (24)
"III-N heterostructure devices for low-power logic"
Proceedings of the Semiconductor Technology International Conference (CSTIC), 2017 China, Pages 1-3;doi:10.1109/CSTIC.2017.79197432017Not Cited Yet
0
0
"Novel III-N heterostructure devices for low-power logic and more"
Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on(pp. 767-769). IEEE;doi:10.1109/NANO.2016.77513362016Not Cited Yet
0
0
"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA;doi:10.1109/DRC.2016.75484242016Not Cited Yet
0
0
"Transport in vertically stacked hetero-structures from 2D materials"
33rd International Conference on the Physics of Semiconductors, Beijing, China on July 31- August 5, 2016 2016Not Cited Yet
0
0
"Engineering The Optical Transitions of Self-Assembled Quantum Dots"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Pages: 1 - 4;doi:10.1109/IWCE.2015.73019402015Not Cited Yet
0
0
"2D tunnel transistors for ultra-low power applications: Promises and challenges"
2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2 Oct. 2015, Berkeley, CA, Page(s): 1 - 3;doi:10.1109/E3S.2015.73367922015Not Cited Yet
0
0
"Electrically doped WTe2 tunnel transistors"
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 9-11 Sept. 2015, Washington, DC, Page(s): 270 - 272;doi:10.1109/SISPAD.2015.72923112015Not Cited Yet
0
0
"Electrically Doped 2D matertial tunnel transistor"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Pages: 1 - 3;doi:10.1109/IWCE.2015.73019662015Not Cited Yet
0
0
"Achieving a higher performance in bilayer graphene FET - strain engineering"
the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, 9-11 Sep. 2015, Pages: 177 - 181;doi:10.1109/SISPAD.2015.72922882015Not Cited Yet
0
0
"Statistical Modeling of Ultra-Scaled Donor-Based Silicon Phosphorus Devices"
2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 2014, Page(s): 1 - 2;doi:10.1109/SNW.2014.73485892014Not Cited Yet
0
0
"Designing a large scale quantum computer with atomistic simulations"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73485652014Not Cited Yet
0
0
"Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73486062014Not Cited Yet
0
0
"Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics"
IEEE Silicon Nanoelectronics Workshop (SNW), Page(s): 1 - 2, 8-9 June 2014;doi:10.1109/SNW.2014.73485502014Not Cited Yet
0
0
"Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots"
14th IEEE International Conference on Nanotechnology, 18-21 Aug. 2014, Page(s): 921 - 924, Toronto, ON;doi: 10.1109/NANO.2014.69681372014Not Cited Yet
0
0
"Atomistic Simulation of GaN/InN/GaN Tunnel FETs"
Berkeley Symposium on Energy Efficient Electronic Systems, 20132013Not Cited Yet
0
0
"Topological insulator states in a broken-gap GaN/InN/GaN system heterojunction"
International Conference on Nitride Semiconductors. Aug 25 -30, 2013. Washington D.C2013Not Cited Yet
0
0
"Level Spectrum of Single Gated As Donors"
Proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008 (Oral presentation).;doi: 10.1063/1.32955702008Not Cited Yet / 76 Downloads
76
0
"Transport spectroscopy of a single atom in a FinFET"
Journal of Physics: Conference Series 2008, Vol 109, pp 012003;doi:10.1088/1742-6596/109/1/01200320080
1
"Addressing the charge and spin of a single dopant atom in a nano MOSFET"
proceedings of the MRS Fall Meeting, Boston, Dec. 1-4, 20082008Not Cited Yet
0
0
"Atomistic Understanding of a Single Gated Dopant Atom in a MOSFET"
proceedings of the MRS Spring meeting 2008 San Fransico 20082008Not Cited Yet
0
0
"Determination of the eigenstates and wavefunctions of a single gated As donor"
International Conference on Nanoscience and Nanotechnology, ICONN 2008, Feb. 25-29, 2008, Page(s):164-167;doi : 10.1109/ICONN.2008.46392722008Not Cited Yet
0
0
"Transport-based dopant mapping in advanced FinFETs"
IEEE IEDM, San Francisco, USA, Dec. 15-17, 2008;doi : 10.1109/IEDM.2008.479679420080
7
"Eigenvalue Solvers for Atomistic Simulations of Electronic Structures with NEMO-3D"
Proceedings of The 12th International Workshop on Computational Electronics, University of Massachusetts Amherst, Oct. 7-10, 2007;doi : 10.1007/s10825-008-0223-52007Not Cited Yet
0
0
"Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field"
proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849;doi: 10.1063/1.27301572006Not Cited Yet
0
0
Conferences (80)
"Optimizing the Device Structure of 2D Material Tunnel FETs"
TECHCON 2017, Renaissance Hotel in Austin, Texas, September 10-12, 201720170
0
"Interface induced spin-orbit interaction in silicon quantum dots and anisotropic dephasing time"
2017 Silicon Quantum Electronics Workshop, August 18-21, 2017, Intel Jones Farm Conference Center, Hillsboro, Oregon20170
0
"Exchange coupling in silicon quantum dots from atomistic configuration interaction"
2017 Silicon Quantum Electronics Workshop, August 18-21, 2017, Intel Jones Farm Conference Center, Hillsboro, Oregon20170
0
"Electrostatic and Quantum Transport Simulations of Quantum Point Contacts in the Integer Quantum Hall Regime"
APS March Meeting 2017 Volume 62, March 13–17, 2017, New Orleans, Louisiana20170
0
"III-N heterostructure devices for low-power logic"
2017 China Semiconductor Technology International Conference (CSTIC), Shanghai, China, March 12-13, 2017 20170
0
"Interface induced spin-orbit interaction in silicon quantum dots and prospects of scalability"
APS March Meeting 2017 Volume 62, March 13–17, 2017, New Orleans, Louisiana20170
0
"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA20160
0
"The Influence Of Carrier Thermalization On The Performance Of Nitride Tunneling Hetero-Structures"
TECH CON 2016, Sept. 11 - Tuesday, Sept. 13, 2016, Renaissance Austin Hotel, Austin, TX, United States20160
0
"Why Do We Need Novel Steep Transistors?"
TECH CON 2016, Sept. 11 - Tuesday, Sept. 13, 2016, Renaissance Austin Hotel, Austin, TX, United States20160
0
"Transport in vertically stacked hetero-structures from 2D materials"
33rd International Conference on the Physics of Semiconductors, Beijing, China on July 31- August 5, 2016 20160
0
"Atomistic Modeling of Interlayer TFETs"
2016 LEAST review, August 10 & 11, 2016, University of Notre Dame20160
0
"Atomistic Modeling of WTe-MoS2 Interlayer TFETs"
TECH CON 2016, Sept. 11 - Tuesday, Sept. 13, 2016, Renaissance Austin Hotel, Austin, TX, United States20160
0
"Novel III-N heterostructure devices for low-power logic and more"
2016 IEEE 16th International Conference on Environment and Electrical Engineering, Florence, Italy, 2016 20160
0
"Valley dependent electron spin resonance in a silicon quantum dot with integrated micro-magnets"
Silicon Quantum Electronics Workshop, 13 & 14 June 2016, Science Centre of TU Delft, The Netherlands20160
0
"Valley dependent anisotropic spin splitting in silicon quantum dots"
Poster Session, ARO Quantum computing program review, Alexandria, VA, 18-21 July, 2016 20160
0
"2D crystal TFETs"
LEAST review, August 10 & 11, 2016, University of Notre Dame20160
0
"Double Gated TMD p/n Junctions for TFET Applications"
LEAST review, August 10 & 11, 2016, University of Notre Dame20160
0
"Atomistic modeling of 2D material devices"
US-EU workshop on 2D layered materials and devices, Arlington, Virginia, April 22, 201520160
0
"Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5"
Progress In Electromagnetics Research Symposium (PIERS), August, 2016, Shanghai, China20160
0
"Valley dependent g-factor anisotropy in Silicon quantum dots"
APS March Meeting 2016, March 14–18, 2016; Baltimore, Maryland20160
0
"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 201520150
0
"Transport properties of bilayer graphene field effect transistor"
TECHCON 2015, Sept. 20-22, 2015, Austin, TX, United States20150
0
"Electrically Doped 2D Material Tunnel Transistors"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA20150
0
"Atomistic Simulation of Electrically Doped WTe2 Tunnel Transistor"
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, September 9-11, 201520150
0
"Achieving a higher ON/OFF ratio in Bilayer Graphene FET-- Strain Engineering"
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, September 9-11, 201520150
0
"Transport characteristics of Nitride TFETs: Ballistic versus scattering"
2015 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 & 13, 2015 , University of Notre Dame.20150
0
"Local electrical control of a single-atom spin qubit in a continuous microwave field"
APS March Meeting 2015, Volume 60, Number 1 March 2–6, 2015; San Antonio, Texas20150
0
"Valley dependent spin and charge properties of silicon quantum dots"
Poster Session, ARO Quantum computing program review, San Diego, Aug 10-12, 201520150
0
"Atomistic modeling of spin qubits hosted in realistic silicon quantum dots"
Poster Session, ARO Quantum computing program review, San Diego, Aug 10-12, 201520150
0
"Modeling exchange interaction in bulk and sub-surface donor pairs in silicon for two-qubit gates"
Poster Session, ARO Quantum computing program review, San Diego, Aug 10-12, 201520150
0
"Modeling exchange interaction in bulk and sub-surface donor pairs in silicon for two-qubit gates"
CQC2T Workshop at Kingscliff, New South Wales (NSW), Australia, February 18 - 20, 201520150
0
"High Performance Bilayer graphene transistors"
LEAST review, student poster, South Bend, IN, Aug. 201520150
0
"Challenges and Solutions for 2D Material Tunnel Transistors"
TECHCON 2015, Sept. 20-22, 2015, Austin, TX, United States.20150
0
"Engineering inter-qubit exchange coupling between donor bound electrons in silicon"
Silicon Quantum Electronics Workshop, Poster session, Takamatsu Japan, Aug. 3-4, 201520150
0
"Atomistic configuration interaction simulations of two-electron states of donors in silicon"
APS March Meeting, San Antonio TX, March 2-6, 201520150
0
"2D Tunnel Transistors for Ultra-Low Power Applications: Promises and Challenges"
Fourth Berkeley Symposium on Energy Efficient Electronic Systems (2015)20150
0
"Interface roughness mediated phonon relaxation rates in Si quantum dots"
APS March Meeting 2015, Volume 60, Number 1, March 2–6, 2015; San Antonio, Texas20150
0
"Atomistic simulations of multi-electron states for donor qubits in silicon"
Silicon Quantum Electronics Workshop, Albuquerque, NM, Aug 18-19, 201420140
0
"Transport properties of 2D material transistors"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 201420140
0
"Transport Properties of 2D Material Transistors"
TECHON 2014, October 1-3, 2014, Santa Clara, CA20140
0
"Atomistic Simulation of Steep Subthreshold Slope Bi-layer MoS2 Transistors"
Poster Session, 2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 201420140
0
"Designing a Large Scale Quantum Computer with Atomistic Simulations"
Poster Session, 2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 201420140
0
"Statistical Modeling of Ultra-Scaled Donor-Based Silicon Phosphorus Devices"
Poster Session, 2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 201420140
0
"Silicon at the Fundamental Scaling Limit - Atomic-Scale Donor-Based Quantum Electronics"
2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 201420140
0
"Atomistic Tight-binding Modeling of III-Nitride Materials and Field Effect Transistors"
2014 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 - 14, 2014 , University of Notre Dame.20140
0
"Atomistic modeling of STM patterned donor devices for Si quantum computing"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 201420140
0
"Many-particle states in Coulomb confined quantum dots from atomistic tight- binding calculations"
Poster Session, ARO/LPS Quantum computing program review, Washington DC, Aug 11-15, 201420140
0
"A metrology technique for phosphorus-donor clusters in silicon based on hyperfine splittings"
Poster Session, APS march meeting, Denver CO, March 3-7, 201420140
0
"Atomistic analysis of valley-orbit hybrid states and inter-dot tunnel rates in a Si double quantum dot"
APS march meeting, Denver CO, March 3-7, 201420140
0
"Phonon induced spin relaxation times of single donors and donor clusters in silicon"
APS march meeting, Denver CO, March 3-7, 201420140
0
"Optimization of the Anharmonic Strain Model to Capture Realistic Strain Distributions in Quantum Dots"
IEEE Nano, Toronto, 201420140
0
"Nanoelectronic Modeling (NEMO) for Si-based Quantum Electronics"
International workshop on Silicon Quantum electronics Villard-de-Lans 7-8 February 201320130
0
"Tight Binding modeling of monolayer MoS2 and ilayer graphene devices"
2013 LEAST (Center for Low Energy Systems Technology) Annual Review, August 14 & 15, 2013 , University of Notre Dame.20130
0
"Atomistic Modeling of Nitride Devices"
2013 LEAST (Center for Low Energy Systems Technology) Annual Review, August 14 & 15, 2013 , University of Notre Dame.20130
0
"Metrology Studies with NEMO, a Multimillion Atom Simulation Tool"
The 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, March 25-28, 2013, at the National Institute of Standards and Technology (NIST), Gaithersburg, Maryland, USA20130
0
"Electronic structure of sub-surface Boron acceptors in silicon for potential qubits"
APS March Meeting, March 18-22, 2013, Baltimore, Maryland.20130
0
"Million-Atom Electronic Structure Simulations for Realistically Large Si-Based Quantum Devices"
International Workshop On Silicon Quantum Electronics, Chowder Bay, Sydney, Feb 13-14, 2012.20120
0
"Advanced Simulation of a Donor Spin Qubit Device"
International Workshop on Silicon Quantum Electronics, Sydney Australia, February 13-14, 201220120
0
"Advanced Simulation Methods for a Single Donor Spin Qubit Device"
CQC2T Workshop, Feb 15- 16, 201220120
0
"Advanced Simulation Methods for a Single Donor Spin Qubit Device"
International Workshop On Silicon Quantum Electronics, Chowder Bay, Sydney, Feb 13-14, 2012.20120
0
"Advanced Simulation of a Donor Spin Qubit Device"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 2011.20110
0
"Atomistic Modeling of Ultra-Scaled Devices"
Globalfoundries Workshop on III-V devices for high performance logic, Nov. 2 2010, Host: Dr. Witek Maszara.20100
0
"Atomistic Electronic Structure and Transport Modeling of Realistically Extended Nanoelectronic Devices"
2010 International Conference On Nanoscience and Nanotechnology (ICONN), Sydney, 22-26th Feb. 2010.20100
0
"Atomistic Electronic Structure and Transport Modeling of Si:P devices"
Center for Quantum Computing (CQCT) 2010 Annual Workshop, Harbours Edge, Darling Harbour, Sydney. Feb 15-17, 2010.20100
0
"Tunnelling rates in silicon qubit devices"
2010 International Conference On Nanoscience and Nanotechnology (ICONN), Sydney, 22-26th Feb. 2010. 20100
0
"NEMO 3-D and OMEN: Nanoelectronic modeling tools for advanced semiconductor device studies and their deployment on nanoHUB.org"
American Chemical Society meeting, Salt Lake City, Utah, 22-26 March 200920090
0
"Electric field control of single donors in silicon"
American Physical Society, March Meeting, March 16-20, Pittsburgh, PA, 2009.20090
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali, Maui, Nov. 29-Dec. 4, 2009.20090
0
"Electronic Transport Properties of Single Donors in Nanoscale Si MOSFETs"
2009 Silicon Nanoelectronics Workshop, Rihga Royal Hotel Kyoto, Kyoto, Japan, June 13-14, 2009. 20090
0
"Coherent electron transport by adiabatic passage in a triple donor system with imperfect donor placement"
Univeristy of California Berkeley, Aug. 24-25, 2009;doi:10.1103/PhysRevB.82.15531520090
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
Univeristy of California Berkeley, Aug. 24-25, 2009. 20090
0
"Million-Atom Electronic Structure Simulations for Realistically Large Si-Based Quantum Devices"
Univeristy of California Berkeley, Aug. 24-25, 2009. 20090
0
"Determination of the eigenstates and wavefunctions of a single gated As donor"
International Conference on Nanoscience and Nanotechnology, ICONN 2008, Feb. 25-29, 2008;doi:10.1109/ICONN.2008.46392722008152
0
"Transport-based dopant mapping in advanced FinFETs"
IEEE IEDM, San Francisco, USA, Dec. 15-17, 2008; approx. 10% acceptance rate;doi:10.1109/IEDM.2008.47967942008207
0
"Kondo Effects and Transport through a single gated donor atom"
Proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008 (Oral presentation).20080
0
"Interior Spectrum Eigenvalue Solvers for NEMO 3-Ds"
Supercomputing 2007, Reno, NV, electronic poster at Purdue University Exposition Booth, Nov. 13-16, 2007.20070
0
"Efficient Calculation of Long-Range Coulomb interactions"
Supercomputing 2007, Reno, NV, electronic poster at Purdue University Exposition Booth, Nov. 13-16, 2007.20070
0
"Alternative Sparse Eigensolvers and Performance Optimization for Electronic Structure Simulations with NEMO-3D"
Purdue Computing Research Institute (CRI), High Performance Computing Research Poster Session, October 25 2007, LWSN Building.20070
0
"Alternative Sparse Eigensolvers and Performance Optimization for Electronic Structure Simulations with NEMO-3D"
The 12th International Workshop on Computational Electronics, University of Massachusetts Amherst, Oct. 7-10, 200720070
0
"Si:P Quantum Computer Architecture"
Network for Computational Nanotechnology annual site visit, June 19-22, 2006, Purdue University.20060
0
Others (18)
"Field Controlled Dynamic Bandgap"
LEAST annual review, South Bend, IN, 201420140
0
"Atomistic Modeling of 2D Material Based Steep Subthreshold Field Effect Transistors"
LEAST annual review, South Bend, IN, 201420140
0
"Atomistic Modeling of Disordered Silicon Quantum Dots"
ARO/LPS Quantum computing program review, Washington DC, Aug 11-15, 201420140
0
"Components of atomistic modeling for donor devices"
ARO/LPS Quantum computing program review, Washington DC, Aug 11-15, 201420140
0
"Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon"
;doi:10.4032/978981431669920130
0
"Dopant Metrology in Advanced FinFets"
Chapter 1 DOPANT METROLOGY IN ADVANCED FINFETS, ISBN: 9789814364027 Publication Date: January 31, 2012,20120
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 19-20, 2010.20100
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 21-22, 2009. 20090
0
"Multimillion Atom Simulations with Nemo3D"
Part 13 20090
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / DTO / ARO Quantum Computing Technology Workshop, Atlanta, August 11-13, 2008.20080
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / DTO / ARO Quantum Computing Technology Workshop, Minneapolis, August 12-17, 2007.20070
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
LPS / ARO Site visit to University of Wisconsin, Madison, Sept. 19, 2006.20060
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / ARO Quantum Computing Technology Workshop, Atlanta, August 14-16, 2006.20060
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / ARDA / ARO Quantum Computing Technology Workshop, Tampa, FL, August 22-26, 2005.20050
0