Single Impurity


Our research focuses on the electronic structure of impurities in silicon for nano-electronic and quantum computing applications. Individual dopants provide 3D confinement to electrons as in quantum dots, and provide access to a number of quantum phenomena typically associated with single atoms. The impurity wave functions typically span for tens of nano meters in the crystal, giving rise to the possibility of exercising gate control. Our primary focus is to investigate quantum control of such impurities for high fidelity qubit design. Typically, We employ the semi-empirical tight-binding theory under the hood of the Nanoelectronic Modeling Tool (NEMO 3-D), and make use of large-scale parallel computing for our calculations.


  • University of Melbourne (Center for Quantum Computer Technology), Australia
  • Professor Lloyd C. L. Hollenberg, Christopher C. Escott, Jared Cole, Andrew D. Greentree
  • Princeton University, NJ, USA
  • Forrest R. Bradbury
  • Sandia National Labaratory, NM, USA
  • Richard P. Muller, Rajib Rahman
  • Delft University of Technology, Nethelands
  • Professor Sven Rogge, Arjan Verdujin, Gabri Lansberge

Major Projects in this area:

Group Members Involved: