Neophytos Neophytou

Objective:

• Investigate mechanisms of ON-current variation by the anisotropic bandstructure
• ON-current variations at the onset of volume to surface inversion in [110] PMOS NWs

Approach:

• Use the atomistic sp3d5s*-SO model with ballistic transport
• Simulate the ON-current of devices of widths/heights 3nm-12nm (all combinations within)
• Form the ON-current variation surface (shown to the right)

Impact

• Design space has been identified for minimal current variations in [110] PMOS nanowires
• Sharp variations are identified at the onset of volume to surface inversion in [001] heights
• Strain can tune the sensitivity, or shift it in different regions

Results

• The ON-current variation surface of [110] PMOS nanowires as the width in [1-10] and height in [001] is varied from 3nm to 12nm
• The charge placement is different for each quantization surface
• Sharp variations are observed at 6nm of height in [001]

Publication

• Tool at nanoHUB.org Band Structure lab
• Nano Letters [J_2009_3].