Neophytos Neophytou

Quantum transport in III-V HEMTs for high performance logic applications

Quantum transport in III-V HEMTs for High Performance Logic Applications Neophytos Neophytou, Titash Rakshit, Mark Lundstrom

Objective:

  • Understand experimental data on III-V HEMT devices for logic applications
  • How close to the ballistic limit are short channel III-V devices
  • What controls their performance?

Approach:

  • Use a 2D quantum (NEGF) simulator
  • Simulate the experimental structure using delta-doped doping
  • Use the sp3d5s* TB model to extract the effective mass of the III-V channel

Impact

  • Devices as short as LG=60nm are close to the ballistic limit
  • The series resistance RSD and the design of the contacts affects the performance
  • Identified the low doping in the contacts as the most possible reason for the GM degradation observed in experimental data

Publication

  • arxiv: 0810.1540

Results

  • GM rolls off as the gate bias increases, possibly due to source exhaustion
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Neophytos Neophytou's Pages

Biography A 3D atomistic quantum simulator for realistic CNT structures. The work is published in A 2D ballistic model for the investigation of atomistic bandstructure effects. Bandstructure effects in Si nanowire electron transport. Bandstructure effects in Si nanowire hole transport. Design for variability tolerance: On current variation in [110] PMOS nanowires. Quantum transport in III-V HEMTs for high performance logic applications

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