Neophytos Neophytou

Bandstructure effects in Si nanowire hole transport.

Bandstructure Effects in Silicon Nanowire Hole Transport Neophytos Neophytou, Abhijeet Paul, Gerhard Klimeck

Objective:

  • Understand the transport properties of PMOS Si nanowire devices at the ballistic limit
  • Investigate bandstructure effects in ultra-scaled Si PMOS nanowires

Approach:

  • Use the sp3d5s*-SO TB atomistic model for the electronic structure calculation, self-consistently coupled to a 2D Poisson
  • Use a semi-classical ballistic model for transport

Results

  • Dispersions are different in different orientations and strongly bias dependent
  • The charge placement profile is different in different oriented wires
  • The capacitance of the wires and the total amount of charge is very similar
  • Velocities depend on orientation and dominate the current differences

Publication

  • Tool at nanoHUB.org Band Structure lab
  • IEEE TED [J_2008_19].
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Neophytos Neophytou's Pages

Biography A 3D atomistic quantum simulator for realistic CNT structures. The work is published in A 2D ballistic model for the investigation of atomistic bandstructure effects. Bandstructure effects in Si nanowire electron transport. Bandstructure effects in Si nanowire hole transport. Design for variability tolerance: On current variation in [110] PMOS nanowires. Quantum transport in III-V HEMTs for high performance logic applications