Neophytos Neophytou

Bandstructure effects in Si nanowire electron transport

Bandstructure Effects in Silicon Nanowire Electron Transport Neophytos Neophytou, Abhijeet Paul, Mark Lundstrom, Gerhard Klimeck

Objective:

  • Understand the transport properties of NMOS Si nanowire devices at the ballistic limit
  • Investigate bandstructure effects in ultra-scaled Si NMOS nanowires

Approach:

  • Use the sp3d5s*-SO TB atomistic model for the electronic structure calculation
  • Investigate the scaling behavior and transport properties of NWs in various orientations

Results

  • The effective mass of the NWs varies as the NW is scaled, and varies differently in different orientations
  • The anisotropy and non-parabolicity of the electronic structure is responsible for this behavior

Publication

  • Tool at nanoHUB.org Band Structure lab
  • IEEE TED [J_2008_11].
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Neophytos Neophytou's Pages

Biography A 3D atomistic quantum simulator for realistic CNT structures. The work is published in A 2D ballistic model for the investigation of atomistic bandstructure effects. Bandstructure effects in Si nanowire electron transport. Bandstructure effects in Si nanowire hole transport. Design for variability tolerance: On current variation in [110] PMOS nanowires. Quantum transport in III-V HEMTs for high performance logic applications

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