Publications

Journals

  • Sultan R. Helmi, Jing-Hwa Chen and Saeed Mohammadi, “High-efficiency microwave and mm-wave stacked cell CMOS SOI power amplifiers,” to appear in IEEE trans. on Microwave Theory and Techniques.

  • N. Opondo and S. Mohammadi, “Trap Characterization in Germanium on Insulator Junctionless Field-Effect Transistors using Low-Frequency Noise,” submitted for publication.

  • Y. Shen and S. Mohammadi, “An Accurate MOSFET Model for Predicting Noise and Nonlinear Behavior of NMOS SOI Transistors,” submitted for publication.

  • N. Opondo, Sarath Ramadurgam, Chen Yang, and Saeed Mohammadi, “Trap Studies in Silicon Nanowire Junctionless Transistors using Low Frequency Noise,” to appear in Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structure, 2016.

  • H. Pajouhi, A.Y. Jou, R. Jain, A. Ziabari, A. Shakouri, C.A. Savran and S. Mohammadi “Flexible complementary metal oxide semiconductor microelectrode arrays with applications in single cell characterization,”  Appl. Phys. Lett. 107, 203103, 2015.

  • S. Calvert, Y. Shen, A.B. Sabater, S. Mohammadi, and J.F. Rhoads, “Towards a Comprehensive Model for a Resonant Nanoelectromechanical System,” Journal of Micromechanics and Microengineering, Vol. 25, No. 9, Aug. 2015.

  • Jing-Hwa Chen, Sultan R. Helmi, Alice Y.S. Jou and Saeed Mohammadi, “A Wideband Power Amplifier in 45 nm CMOS SOI Technology for X Band Applications,” IEEE Microwave and Wireless Components Letts. Vol 23, No 11, Nov 2013, pp. 587-589.

  • Jing-Hwa Chen, Sultan R. Helmi, Reza Azadegan, Farshid Aryanfar and Saeed Mohammadi, “A Broadband Stacked Power Amplifier in 45 nm CMOS SOI Technology,” IEEE Journal of Solid State Circuits (JSCC), Vol 48, No 11, Nov 2013, pp. 2775 – 2784.

  • Jing-Hwa Chen, Sultan R. Helmi, Hossein Pajouhi, Yukeun Sim, and Saeed Mohammadi, “A Wideband RF Power Amplifier in 45-nm CMOS SOI Technology With Substrate Transferred to AlN,” IEEE Trans. Microwave Theory and Techniques, Vol 60, No 12, Dec 2012, pp. 4089-4096.

  • Lin Yu, Hossein Pajouhi, Molly Nelis, J. Rhoads and Saeed Mohammadi, “Tunable, Dual-gate, Silicon-on-Insulator (SOI) Nanoelectromechanical Resonators,” IEEE Trans. Nanotechnology, Vol. 11, Nov 2012, pp. 1093-1099

  • M. Saremi, A. Afzali-Kusha, and Saeed Mohammadi, “Ground Plane Fin-shaped Field Effect Transistor (GP-FinFET): A FinFET for Low Leakage Power Circuits,” Microelectronics Engineering, Vol 95, July 2012, pp. 74–82

  • S. Mohammadi, A. Afzali-Kusha, and Saeed Mohammadi, “Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal Oxide Semiconductor Field Effect Transistors Using Doping-Engineered Drift Region,” Japanese Journal of Applied Physics, Vol 55, Sep 2012, 101201

  • Sunkook Kim, H. Kwon, S. Lee, H. Shim, Y. Chun, W. Choi, J. Kwack, D. Han, M. Sung, S. Kim, Saeed Mohammadi, I. Kee and SY Lee, “Low-power flexible organic light-emitting diode display device,” Advanced Materials, Vol. 23, Iss 31, pp. 3511-3516, Aug 2011.

  • M. R. Nelis, L. Yu, W. Zhang, Y. Zhao, C. Yang, A. Raman, S. Mohammadi, and J. F. Rhoads, “Sources and Implications of Resonant Mode Splitting in Silicon Nanowire Devices,” Nanotechnology. 2011. 22(45): 455502.

  • M. Saremi, B. Ebrahimi, A. Afzali-Kusha, and Saeed Mohammadi “A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement” Microelectronics Reliability, vol. 51, no. 12, December 2011, pp. 2069-2076

  • S. Mohammadi, A. Afzali-Kusha, and Saeed Mohammadi, “Drain current model for strained-Si/Si1−xGex/strained-Si double-gate MOSFETs including quantum effects,” Semiconductor Science and Technology, vol. 26, no. 9, September 2011, 095022 doi: 10.1088/0268-1242/26/9/095022.

  • S. Mohammadi, A. Afzali-Kusha, and Saeed Mohammadi, “Compact Modeling of Short Channel Effects in Symmetric and Asymmetric 3-T/4-T Double Gate MOSFETs” Microelectronics Reliability, vol. 51, no. 3, March. 2011, pp. 543-549.

  • R. R. Lahiji, L. P. B. Katehi, S. Mohammadi, “A Wideband CMOS Distributed Amplifier with Slow-Wave Shielded Transmission Lines,” International Journal of Microwave and Wireless Technology, Feb 2011, pp. 59-66, DOI: 10.1017/S1759078710000772

  • Laleh Rabieirad, E. Martinez and Saeed Mohammadi, “An integration technology for RF and microwave circuits based on interconnect programming,” IEEE trans. on Advanced Packaging, Vol. 33, No. 2, pp. 362-369, May 2010.

  • Sunkook Kim, Seongmin Kim, David B Janes, Saeed Mohammadi, Juhee Back and Moonsub Shim, “DC modeling and the source of flicker noise in passivated carbon nanotube transistors,” Nanotechnology, 2010, Vol 21, No. 38, 385203.

  • Sunkook Kim, Seongmin Kim, Jongsun Park, Sanghyun Ju and Saeed Mohammadi, “Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry,” ACS Nano, 4 (6) pp. 29994-2998, 2010.

  • Lin Yu, D. Weon, J. Kim and Saeed Mohammadi, “Integrated high-inductance three-dimensional toroidal inductors,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structure, Vol. 28, Issue 5, pp. 903-907, 2010.

  • R. A. Sayer. S. Kim, A.D. Franklin, Saeed Mohammadi and T.S. Fisher, “Shot noise thermometry for thermal characterization of templated carbon nanotubes,” IEEE trans. on Component and Packaging Technologies, vol 33, no 1, pp. 178-183, Jan 2010.

  • R.R. Lahiji, H. Sharifi, L.P.B. Katehi and Saeed Mohammadi, “3-D CMOS circuits based on low-loss vertical interconnects on Parylene-N,” IEEE trans. on Microwave Theory and Techniques, vol 58, no 1, pp. 48-56, Jan 2010

  • H. Sharifi, R. Lahiji, H.C. Lin, P.D. Ye, L.P.B. Katehi and S. Mohammadi “Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and mm-wave Integrated Circuits,” IEEE trans. on Advanced Packaging, Vol. 32, No. 1, pp. 84-92, Feb. 2009.

  • Teimour Maleki, Saeed Mohammadi and B. Ziaie, “A nanofluidic channel with embedded transverse nanoelectrodes,” Nanotechnology, vol 20, no 10, 105302, pp. March 2009.

  • Laleh Rabieirad, E. Martinez and Saeed Mohammadi, “Mask programmable CMOS transistor arrays for wideband RF integrated circuits,” IEEE trans. on Microwave Theory and Techniques, vol 57, no 6, pp. 1439-1446, June 2009

  • Laleh Rabieirad and Saeed Mohammadi, “Reconfigurable CMOS tuners for software-defined radio,” IEEE trans. on Microwave Theory and Techniques, vol 57, no 11, pp. 2768-2774, Nov 2009.

  • J.H. Back, C.L. Tsai, S. Kim, Saeed Mohammadi and M. Shim, “Manifestation of Kohn anomaly in 1/f fluctuations in metallic carbon nanotubes,” Phys. Rev. Lett., 103, 215501, 2009

  • S. Ju, S. Kim, Y. Ha, A. Facchetti, S. Mohammadi, T.J. Marks and D. B. Janes, “Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements,” Applied Physics Letters (APL), 92, 022104 (2008).

  • W.G. Conley, A. Raman, C.M. Krousgrill and S. Mohammadi, “Non-linear and non-planar dynamics of nanotube and nanowire resonators,” Nano Letters, 8(6): 1590-5 2008, DOI: 10.1021/nl073406j

  • J.H. Back, S. Kim, S. Mohammadi and M. Shim, “Low-frequency noise in ambipolar carbon nanotube transistors,” Nano Letters, 8(4); 1090-1094, DOI: 10.1021/nl073140g

  • S. Kim, Y. Xuan, P.D. Ye and S. Mohammadi, “Single-Walled Carbon Nanotube Transistors Fabricated by Advanced Alignment Techniques utilizing CVD Growth and Dielectrophoresis,” Journal of Solid State Electronics, Vol 52, pp1260-1263, Aug. 2008.

  • Sunkook Kim, S. Ju, J.H. back, Y. Xuan, P. Ye, M. Shim, D.B. Janes and S. Mohammadi, “Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes,” Advanced Materials, Vol 21, pp. 564-568, Nov 2008.

  • S. Ju, S. Kim, P. Chen, C. Zhou, Y. Ha, A. Facchetti, T. J. Marks, S. Mohammadi, and D. B. Janes, “1/f noise of SnO2 nanowire transistors”, Applied Physics Letters 9, 243120 (2008)

  • H. Sharifi and S. Mohammadi, “Self-Aligned Wafer-Level Integration Technology (SAWLIT) with an Embedded Faraday Cage for Substrate Crosstalk Suppression,” Microwave and Optoelectronic Technology Letters, Vol 50, Issue 3, pp. 829-832, March 2008.

  • D. Weon, J. Jeon and S. Mohammadi, “High-Q Micromachined 3-D Integrated Inductors for High Frequency Applications,” Journal of Vacuum Science and Technology B. Volume 25, Issue 1, Jan/Feb 2007.

  • D. Weon, J. Kim  and S. Mohammadi, “Design of high-Q 3-D integrated inductors for high frequency applications,” Journal of Analog Integrated Circuits and Signal Processing, Volume 50, No 2, Feb 2007, pp. 89-93.

  • H. Sharifi, T. Choi and S. Mohammadi, “Self-Aligned Wafer-Level Integration Technology with High Density Interconnects and Embedded Passives,” IEEE trans. on Advanced Packaging, Volume 30, Issue 1, Feb 2007, pp. 11-18.

  • L. Katehi, W. Chappell, S. Mohammadi, A. Margomenos and M. Steer, “Heterogeneous Wafer-Scale Circuit Architectures,” IEEE Microwave Magazine, Feb 2007, pp. 52-69.

  • S. Kim, Y. Xuan, P.D. Ye, S. Mohammadi and M. Shim, “Atomic Layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors,” Applied Physics Letters (APL), 90, 163108 (2007)

  • H. Sharifi and S. Mohammadi, “Heterogeneous Integration of 10Gb/s CMOS Optoelectronic Receivers using Self-Aligned Wafer-Level Integration Technology,” IEEE Photonic Technology Letters, Volume 19,  Issue 14,  July15, 2007 pp. 1066 - 1068

  • H. Lee and S. Mohammadi, “A subthreshold Low Phase Noise CMOS LC VCO for Ultra Low Power Applications,” IEEE Microwave and Wireless Components Letters, Nov 2007, pp. 796-798.

  • T. Choi, H. Sharifi, H.H. Sigmarsson, W.J. Chappell, S. Mohammadi and L.P.B. Katehi, “3-D Integration of 10GHz Filter and CMOS Receiver Front-End,” IEEE trans on Microwave Theory and Techniques, Vol 55, Nov. 2007, pp. 2298-2305.

  • H.C. Lin, S. Kim, D. Chang, Y. Xuan, S. Mohammadi, P.D. Ye, Y. Xuan, G. Lu, A. Facchetti and T.J. Marks, “Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics,” Applied Physics Letters (APL), 91, 092103 (2007).

  • H.C. Lin, Y. Tang, H. Sharifi, S.K. Kim, Y. Xuan, T. Shen, S. Mohammadi and P. Ye, “Enhancement-Mode GaAs MOS-HEMTs with Atomic layer Deposited High-K gate Dielectrics,” Applied Physics Letters (APL), 91, 212101 (2007).

  • Barry Perlman, L. Katehi, A. Ballato, N. Engheta, D. Peroulis and S. Mohammadi, “Nanotechnology and Active Thin Films for Compact RF Components and Agile Systems,” Proceedings of Ferroelectronics, Volume 342, May 2006, pp. 163-182.

  • R.R. Lahiji, K.J. Herrick, Y. Lee; A. Margomenos, S. Mohammadi, L.P.B. Katehi, “Multiwafer vertical interconnects for three-dimensional integrated circuits,” IEEE trans on Microwave Theory and Techniques, Volume 54, Issue: 6 , June 2006  pp. 2699 - 2706.

  • K. Lee, S. Mohammadi, P. Bhattacharya and L.P.B. Katehi, “Compact Models Based on Transmission-Line Concept for Integrated capacitors and Inductors,” IEEE Trans on Microwave Theory and Techniques, Volume 54,  Issue 12,  Part 1,  Dec. 2006, pp. 4141 - 4148.

  • K. Lee, S. Mohammadi, P. Bhattacharya and L.P.B. Katehi, “A Wideband Compact Model for Integrated Inductors,” IEEE Microwave and Wireless Components Letters,
    Volume 16, Issue 9, Sept. 2006, pp. 490 – 492.

  • W.Y. Liu, J. Suryanarayanan, J. Nath, S. Mohammadi, L.P.B. Katehi, M.B. Steer, “Toroidal inductors for radio-frequency integrated circuits,” IEEE trans on Microwave Theory and Techniques, Volume 52 , Issue: 2 , Feb. 2004  Pages:646 – 654.

  • B. S. Makki, M.G. Fard, S. Mohajerzadeh, T. Maleki, S. Mohammadi, M. Miri and E. Soleimani, “A novel ultra-violet assisted anisotropic etching of plastic to realize micro-gears,” Sensors and Actuators A: Physical, A115 N2-3, 2004, pp. 563-570.

  • M.B. Steer, L.P.B. Katehi, S. Mohammadi, J.F. Whitaker and A.B. Yakovlev, “Architectures and Prototyping Laboratory for the Development of Space-Based Microwave Power Transmission Systems,” The Radio Science Bulletin, No 311, Dec. 2004, pp. 7-15

  • Yumin Lu, D. Peroulis, S. Mohammadi, L.P.B. Katehi, “A MEMS reconfigurable matching network for a class AB amplifier,” IEEE Microwave and Wireless Components Letters, Volume: 13 , Issue: 10 , Oct. 2003, pp. 437 – 439.

  • Z. Ma, S. Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak,  “A high power and high gain X-band Si/SiGe heterojunction bipolar transistors,”  IEEE trans. on Microwave Theory and Techniques, Vol 50, No 4, April 2002, pp.1101-1108.

  • Saeed Mohammadi and D. Pavlidis, “A non-fundamental theory of low-frequency noise in semiconductor devices, ” IEEE trans on Electron Devices, vol. 47 no. 11, pp.2009-2017, Nov. 2000.

  • Z. Ma, S. Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, ”High Power X-band (8.4 GHz) SiGe/Si Heterojunction Bipolar Transistor, ” Electronic Letters, Vol 37 No 12, pp. 790 –791, June 2001.

  • Jae-Woo Park, D. Pavlidis, S. Mohammadi, J-L. Guyaux and J-C Garcia, “Improved Emitter Transit Time Using AlGaAs-GaInP Composite Emitter in GaInP/GaAs Heterojunction Bipolar Transistors, ” IEEE trans. on Electron Devices, vol. 48, pp. 1297-1303, July 2001.

  • Z. Ma, S. Mohammadi, L.-H. Lu, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, ” An X-Band High-Power Amplifier Using SiGe/Si HBT and Lumped Passive Components,” IEEE Microwave and Wireless Components Letters, vol.11, no. 7, pp. 287-289, July 2001.

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak, , K. Strohm, J.F. Luy, “Ku-band (12.6GHz) SiGe/Si high-power heterojunction bipolar transistors, ” Electronic Letters, Vol. 37, No. 18, pp. 1-2, Aug 2001.

  • Saeed Mohammadi, S.M. Hubbard, C. Chelli, D. Pavlidis and B. Bayraktaroglu, “Photo-Luminescence and Transmission Electron Microscope studies of low- and high-reliability AlGaAs/GaAs HBTs,” J. Solid State Electronics, vol. 44 no. 4, pp. 739-746, April 2000.

  • Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu,  “Relation between low-frequency noise and long-term reliability of AlGaAs/GaAs single power HBTs, ” IEEE trans. on Electron Devices, vol.47 no. 4, pp. 677-686, Apr. 2000.

  • Jae-Woo Park, S. Mohammadi and D. Pavlidis, “Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics,” J. Solid State Electronics, vol. 44, pp. 1847-1852, 2000.

  • Jae-Woo Park, S. Mohammadi, D. Pavlidis, C. Dua, J-L. Guyaux and J-C. Garcia, “Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology,” J. Solid State Electronics, vol. 44, pp. 2059-2067, 2000.

  • Saeed Mohammadi, J-W. Park, D. Pavlidis, J.L. Guyaux and J.C. Garcia, “Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication, ” IEEE trans. on Microwave Theory and Techniques, vol. 48 no. 6, pp. 1038-1044, June 2000.

  • J.C. Garcia, C. Dua, S. Mohammadi, J-W. Park and D. Pavlidis, “Growth characterization of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors,” Journal of Electronic Material , vol. 27 no. 5, pp. 442-445, May 1998.

  • Saeed Mohammadi and C.R. Selvakumar, “Calculation of depletion layer thickness by including the mobile carriers, ” IEEE trans. on Electron Devices, vol. 43 no. 1, pp. 185-188, Jan. 1996.

  • Saeed Mohammadi and C.R. Selvakumar,  “Analysis of BJTs, pseudo-HBTs and HBTs by including the effect of neutral base recombination, ” IEEE trans. on Electron Devices, vol. 41 no. 10, pp. 1708-1715, Oct. 1994

Conference proceedings

  • Jie Cui, S. Helmi and S. Mohammadi, “A stacked CMOS SOI Power Amplifier for 5G applications,” submitted for publication.

  • Alice Jou and S. Mohammadi, “A CMOS Integrated Rectenna for Implantable Applications” submitted for publication.

  • Sultan Helmi and S. Mohammadi, “A Highly Efficient CMOS SOI Power Amplifier for U-Band Applications,” submitted for publication.

  • Hengying Shan, Alice Jou, N. Conrad and S. Mohammadi, “An Integrating Dual Slope ADC for Single-Chip RFID Sensor Nodes,” submitted to ISCAS 2016, Montreal, Canada

  • Sultan R. Helmi, Saeed Mohammadi, “A Fully-Integrated Ultra-Wideband Power Amplifier in CMOS Silicon on Sapphire Technology,” To be presented in 2016 IEEE Silicon Monolithic Integrated Circuits in RF systems, Austin, TX.

  • Alice Yi-Szu Jou, Reza Azadegan and Saeed Mohammadi, “An Efficient Fully Integrated Miniature Rectenna in a Standard CMOS SOI Technology,” To be presented in 2016 IEEE Silicon Monolithic Integrated Circuits in RF systems, Austin, TX.

  • Saeed Mohammadi, “Bring the system down – to a chip,” Invited- to be presented in 2016 IEEE Silicon Monolithic Integrated Circuits in RF systems, Austin, TX.

  • Sultan R. Helmi, Hengying Shan, and Saeed Mohammadi, “A 1.8 to 2.4 GHz Stacked Power Amplifier Implemented in 0.25μm CMOS SOS Technology,” IEEE Si Monolithic Integrated Circuits in RF Systems, San Diego, CA, Jan 2015.

  • Alice Yi-Szu Jou, Chen Liu, Saeed Mohammadi, “An Integrated Reconfigurable Tuner in 45nm CMOS SOI Technology,” IEEE Si Monolithic Integrated Circuits in RF Systems, San Diego, CA, Jan 2015. (Second-Place Student Paper Award)

  • Jing-Hwa Chen, Sultan R. Helmi, Alice Yi-Szu Jou, and Saeed Mohammadi, “A Fully-integrated 18 GHz Class-E Power Amplifier in a 45 nm CMOS SOI Technology,” 2014 IEEE Radio Frequency Integrated Circuits (RFIC), Tampa, FL.

  • Sultan R. Helmi, Jing-Hwa Chen and Saeed Mohammadi, “A Stacked Cascode CMOS SOI Power Amplifier for mm-Wave Applications,” 2014 IEEE International Microwave Symposium, (IMS), Tampa, FL.

  • Sultan Helmi, Jing-Hwa Chen and Saeed Mohammadi, “An X to Ka-Band Fully-integrated Dynamically-Biased Stacked Power Amplifier in 45nm CMOS SOI Technology,” IEEE Si Monolithic Integrated Circuits in RF Systems, Newport Beach, CA, Feb 2014.

  • Jing-Hwa Chen, Sultan Helmi, Dan Nobbe and Saeed Mohammadi, “A Fully-integrated High Power Wideband Power Amplifier in 0.25 um CMOS SOS Technology,” IEEE International Microwave Symposium, Seattle, WA, June 2013.

  • Jing-Hwa Chen, Sultan Helmi and Saeed Mohammadi, “A fully-integrated Ka-Band Stacked Power Amplifier in 45nm CMOS SOI Technology,” IEEE Si Monolithic Integrated Circuits in RF Systems, Austin, TX, Feb 2013. (Best Student Paper Award)

  • Jing-Hwa Chen, S. Helmi, H. Pajouhi, Y. Sim and Saeed Mohammadi, “A 1.8GHz Stacked Power Amplifier in 45nm CMOS SOI Technology with Substrate-Transferred to AlN,” International Microwave Symposium, Montreal, Canada, June 2012.

  • Jing-Hwa Chen, Sultan Helmi and Saeed Mohammadi, “An X-Band Stacked Power Amplifier in a Nanoscale CMOS SOI Technology,” Power Amplifier Symposium, San Diego, CA, Sep. 2012.

  • Jing-Hwa Chen, S. Helmi and S. Mohammadi, “Millimeter-wave Power Amplifiers in 45nm CMOS SOI Technology,” IEEE International SOI Conference, Oct 2011.

  • M. R. Nelis, J. F. Rhoads, and S. Mohammadi, “The Effects of Geometric Asymmetry on the Dynamic Response of Silicon Nanowires,” IDETC/CIE 2011: The 2011 ASME International Design Engineering Technical Conferences, 5th International Conference on Micro- and Nanosystems. 2011. Washington, District of Columbia. DETC2011-47978.

  • M. R. Nelis, L. Yu, A. Raman, S. Mohammadi, and J. F. Rhoads, “The Effects of Asymmetry on the Dynamics of Nanowires,” The 2011 NSF Engineering Research and Innovation Conference. 2011. Atlanta, Georgia. 

  • Lin Yu, S. Kim and Saeed Mohammadi, “DC and flicker noise models for passivated single-walled carbon nanotube transistors,” Device Research Conference June 2010, South Bend IN pp. 11-112.

  • W. G. Conley, L. Yu, M. R. Nelis, A. Raman, C. M. Krousgrill, S. Mohammadi, and J. F. Rhoads, “The Nonlinear Dynamics of Electrostatically-Actuated, Single-Walled Carbon Nanotubes,”  RASD 2010: The 10th International Conference on Recent Advances in Structural Dynamics. 2010, Southampton, United Kingdom.

  • G. Aroshvili, S. Mohammadi, D. Pavlidis and B. Bayraktaroglu, “Random and Dielectrophoresis Based CNT Technology for FETs,” Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Darmstadt, Germany, May 2010.

  • R. Lahiji, H. Sharifi, S. Mohammadi and L.P.B. Katehi, “Low loss coplanar waveguide transmission lines and vertical interconnects on multi-layer Parylene-N,” IEEE Si Monolithic Integrated Circuits in RF Systems, San Diego, CA, pp. 1-4 Jan 2009. (Second-Place Student Paper Award)

  • R. Lahiji, H. Sharifi, L.P.B. Katehi and S. Mohammadi “Design and implementation of a novel three dimensional CMOS low noise amplifier with transmission lines on parylene-N,” IEEE International Microwave Symposium, Boston, MA, pp. 589-592, June 2009.

  • Laleh Rabieirad and S. Mohammadi “A dual mode programmable distributed amplifier/mixer,” IEEE International Microwave Symposium, Boston, MA, pp. 581-584, Jun 2009.

  • Sunkook Kim, S. Kim, M. Xu, L. Yu, P.D. Ye, D. Janes, S. Ju and Saeed Mohammadi, “Transparent driving thin-film transistor circuits based on uniformly grown single-walled carbon nanotube network,” Device Research Conference, June 2009, College Station, PA.

  • Seongmin Kim, Sunkook Kim, C. Lee, P. Srisungsitthisunti, P. Chen, C. Zhou, X. Xu, M. Qi, Saeed Mohammadi, S. Ju and D.B. Janes, “Femtosecond laser annealing effects on indium oxide  nanowire transistors,” ISDRS 2009, College Park, MD, Dec. 2009.

  • J. F. Rhoads, W. G. Conley, A. Raman, C. M. Krousgrill, L. Yu, and S. Mohammadi, “Exploiting Parametric Effects in Resonant Nanosystems,” The 2009 NSF Engineering Research and Innovation Conference, Honolulu, Hawaii 2009.

  • H. Sharifi, and S. Mohammadi, “Substrate Crosstalk Suppression Using Self-Aligned Wafer-Level Integration Technology (SAWLIT),” IEEE Si Monolithic Integrated Circuits in RF Systems, Orlando, FL pp. 147-150, Jan 2008.

  • L. Rabieirad and S. Mohammadi, “A reconfigurable MEMS-less CMOS tuner for software defined radio,” IEEE International Microwave Symposium, Atlanta, GA, pp. 779-782, June 2008.

  • S. Mohammadi, L. Yu, L. Rabieirad, H. Sharifi, “Self-aligned and self-assembled integration,” International Microelectronics and Packaging Society Topical Workshop on Military, Aerospace, Space and Homeland Security (MASH) Packaging Issues and Applications, Linthicum Heights, MD, April 2008.

  • S. Kim, S. Ju, J.H. Back, Y. Xuan, P.D. Ye, M. Shim, D.B. Janes and S. Mohammadi “Aligned single-walled carbon nanotube thin-film transistor arrays for transparent electronics,” Device Research Conference, June 2008, Santa Barbara, CA

  • R. R. Lahiji, S. Mohammadi and L.P.B. Katehi, “A Distributed Analogue CMOS Phase Shifter with Shielded Transmission Line,” 38th European Microwave Conference, pp. 817-820, Oct. 2008.

  • R.A. Sayer, S. Kim, A.D. Franklin, C. Lan, R.G. Reifenberger, S. Mohammadi and T.S. Fisher, Measurement of Thermal Resistance by Shot Noise in Carbon Nanotubes,” International Conference of Nanoscience and Technology (ICN+T 2008), Keystone, Colorado, USA, July 2008.

  • D. Weon and S. Mohammadi, “High Performance 3D Helical RF Transformers,” IEEE MTT-S International Microwave Symposium (IMS 07), 3-8 June 2007 pp: 1897 – 1900, Hawaii.

  • H. Sharifi and S. Mohammadi, “Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver,” IEEE Radio Frequency Integrated Circuits (RFIC 07), 3-5 June 2007 pp. 515 - 518, Hawaii.

  • H. Lee and S. Mohammadi, “A 500uW 2.4GHz CMOS Subthreshold Mixer for Ultra Low Power Applications,” IEEE Radio Frequency Integrated Circuits (RFIC 07), 3-5 June 2007 pp:325 – 328, Hawaii.

  • S. Kim, D. Chang, Y. Xuan, P. Ye and S. Mohammadi, “Interface study of single-walled carbon nanotube transistors using low-frequency noise,” 65th Device Research Conference (DRC 07), Notre Dame, IN, June 2007.

  • H.C. Lin, T. Yang, H. Sharifi, S. Kim, Y. Xuan, T. Shen, S. Mohammadi, P.D. Ye, “Enhancement-mode GaAs MOS-HEMTs with ALD Al2O3, HfO2, HfO2/Al2O3 laminate as high-k gate dielectrics”, 38 IEEE Semiconductor Interface Specialist Conference (SISC 07), Arlington, VA, Dec. 2007.

  • S. Ju, S. Kim, G. Lu, A. Facchetti, S. Mohammadi, T.J. Marks and D.B. Janes, “Interface study of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements,” Electronic Materials Conference (EMC 07), Notre Dame, IN, June 2007.

  • R. Lahiji, H. Sharifi, S. Mohammadi and L.P.B. Katehi, “On the study of Parylene-N for millimeter-wave integrated circuits,” Advance Packaging Materials Symp. (APM), San Jose, CA, pp. 147-151, Oct. 2007.

  • H. Lee and S. Mohammadi, “A 3GHz subthreshold CMOS low noise amplifier,” IEEE Radio Frequency Integrated Circuits, (RFIC 06), San Francisco, CA, 11-13 June 2006.

  • L. Rabieirad and S. Mohammadi, “Single-Walled Carbon Nanotube Mixers,” IEEE MTT-S International Microwave Symposium (IMS 06), June 2006 Page(s):2055 – 2058

  • D. Weon, L.P.B. Katehi and S. Mohammadi, “3-D Integrated Inductors and Transformers on Liquid Crystal Polymer Substrate IEEE MTT-S International Microwave Symposium (IMS 06), June 2006 Page(s):1381 – 1384

  • H. Sharifi, S. Mohammadi and M. Mojarradi, “ Emerging heterogeneous integration technologies for extreme environment ,” GOMAC-Tech 05, April 2005

  • Sunkook Kim, T. Choi, L. Rabieirad, J. Jeon, M. Shim and Saeed Mohammadi, “A Poly-Si Gate Carbon Nanotube Field Effect Transistor for High Frequency Applications,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Beach CA.

  • Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, Saeed Mohammadi, and Linda P. B. Katehi, “High Performance 3-D Micro-Machined Inductors on CMOS Substrate,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Beach CA.

  • Jeong-Il Kim, D. Weon, J. Jeon, S. Mohammadi and L.P.B. Katehi, “Design of Toroidal Inductors Using Stressed Metal Technology,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Beach CA.

  • L. Rabieirad, S. Kim, M. Shim, S. Mohammadi, “Doubly clamped single-walled carbon nanotube resonators operating in MHz frequencies,” 5th IEEE Conference on Nanotechnology (IEEE NANO 05), vol. 2, 11-15 July 2005 Page(s):653 - 656

  • Kim, C. Wang, M. Shim and S. Mohammadi, “Comparison of single-walled carbon nanotube transistors fabricated by dielectrophoresis and CVD growth,” 5th IEEE Conference on Nanotechnology (IEEE NANO 05), 11-15 July 2005 Page(s):868 - 871 vol. 2

  • K. J. Herrick, A. Margomenos, R. R. Lahiji, Y. Lee, S. Lardizabal, S. Mohammadi, L. P. B. Katehi, G. Jerinic, R. Molfino, “Packaging and Transitions for Intelligent RF Microsystems”, Government Microcircuit Application and Critical Technology Conference, GOMACTech-05, April 2005.

  • Kok-Yan Lee, S. Mohammadi, P.K. Bhattacharya and L.P.B. Katehi, “Scalable compact models for embedded passives,” 35th European Microwave Conference, Volume 1, 4-6 Oct. 2005.

  • R.R. Lahiji, K.J. Herrick, S. Mohammadi and L.P.B. Katehi, “Low loss multi-wafer vertical interconnects for three dimensional integrated circuits,” 35th European Microwave Conference, Volume 1,  4-6 Oct. 2005

  • T. Choi, H. Lee, L.P.B. Katehi and S. Mohammadi, “A low phase noise 10 GHz VCO in 0. 18 um CMOS process,” 35th European Microwave Conference, 3-4 Oct. 2005 Page(s):273 – 276

  • H. Lee, T. Choi, S. Mohammadi and L.P.B. Katehi, “An extremely low power 2 GHz CMOS LC VCO for wireless communication applications,” 35th European Microwave Conference, 3-4 Oct. 2005 pp. 31 – 34

  • D. Weon, Jong-Hyeok Jeon, Jeong-Il Kim, S. Mohammadi, L.P.B. Katehi, “High-Q integrated 3-D inductors and transformers for high frequency applications,”  IEEE MTT-S International Microwave Symposium (IMS 04),Volume: 2 , June 6-11, 2004, Pages:877 – 880.

  • Kok-Yan Lee, B. N Johnson, S. Mohammadi, P. K. Bhattacharya, L.P.B. Katehi, “High yield reduced process tolerance self-aligned double mesa process technology for SiGe power HBTs, IEEE MTT-S International Microwave Symposium (IMS 04),Volume: 2 , June 6-11, 2004, Pages: 963 - 966

  • D. Peroulis, S. Mohammadi and L.P.B. Katehi, “High Q integrated passive elements for high frequency applications,” Silicon Monolithic Radio Frequency Conference, 8-10 Sept. 2004 Page(s): 25 – 28

  • Kok-Yan Lee, B. N Johnson, S. Mohammadi, P. K. Bhattacharya, L.P.B. Katehi and G. Ponchak, “An 8.5GHz SiGe-Based Amplifier using Fully Self-Aligned Double Mesa SiGe HBTs,” Silicon Monolithic Radio Frequency Conference, Oct 2004, pp. 311-313.

  • J. Suryanarayanan, W.Y. Liu, Saeed Mohammadi, M.B. Steer, L.P.B. Katehi, Toroidal Inductors for Integrated Radio Frequency and Microwave Circuits,” IEEE Radio Frequency Integrated Circuits, (RFIC 03), Philadelphia, PA, June 2003, pp. 607-610.

  • Maleki,. S. Mohajerzadeh and. S. Mohammadi "A novel ultra-violet assisted micromachining of Plastics" Euro-Senosrs, Portugal. (2003).

  • Jong-Hyeok Jeon, E.J.  Inigo, M.T. Reiha, T. Choi, Y. Lee, S. Mohammadi, L.P.B. Katehi, “The effect of low-k dielectrics on RFIC inductors,” 33rd European Microwave Conference,
    Volume 1,  7-9 Oct. 2003 Page(s):53 – 56.

  • M.T. Reiha, T. Choi, J. Jeon, S. Mohammadi and L.P.B. Katehi, “High-Q differential inductors for RFIC design,” 33rd European Microwave Conference, Volume 1,  7-9 Oct. 2003 pp:127– 130.

  • Saeed Mohammadi, Z. Ma, J. Park, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S.A. Alterovitz, K. M. Strohm, J.-F. Luy, "SiGe/Si Power HBTs for X- to K-Band Applications,” IEEE Radio Frequency Integrated Circuits, (RFIC 02), Seattle, WA, June 2002, Page(s): 373 -376.

  • W.Y. Liu. S. Mohammadi, L.P.B. Katehi, M.B. Steer, “Polymer-membrane-supported fin-line frequency multipliers,” Radio and Wireless Conference, 2002. RAWCON 2002. IEEE , 2002 Page(s): 281 -284.

  • Z. Ma; S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak. , “An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier,” Bipolar/BiCMOS Circuits and Technology Meeting, 2002.Page(s): 151 -154.

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “SiGe-Based HBTs for High-Frequency Microwave Power Amplification,” 2002 Asia Pacific Microwave Conference, Kyoto, Japan Nov 19-22, 2002, pp. 1563-1566.

  • W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, H. Khalkhali, K. Kurabayashi, “Polymer micro-heat-pipe for InP/InGaAs technologies,” IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), 2002. pp. 143 –148.

  • W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, M.B. Steer “Polymer-membrane-supported fin-line frequency multipliers,” IEEE Radio and Wireless Conference (RAWCON) 2002. pp. 281 –284.

  • L-H. Lu, S. Mohammadi, G.E. Ponchak, P.K. Bhattacharya and L.P.B. Katehi, “Design and implementation of micromachined lumped quadrature (90o) hybrids, ” IEEE MTT-S International Microwave Symposium (IMS 01), Phoenix, AZ, May 2001.

  • L-H. Lu, S. Mohammadi, Z. Ma, G.E. Ponchak, S.A. Alterovitz, K.M. Strohm, J.F. Luy, P.K. Bhattacharya and L.P.B. Katehi, “Power SiGe heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology, ” IEEE MTT-S International Microwave Symposium (IMS 01) , Phoenix, AZ, May 2001.

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “Si/SiGe Power Heterojunction Bipolar Transistors for Ku-Band Applications,” Late news paper in 59th Device Research Conference (DRC 01), Notre Dame, IN, June 2001.

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “A 180mW 18GHz Si/SiGe power heterojunction bipolar transistor,” IEEE Topical Workshop on Power Amplifiers for Wireless Communications, Sand Diego, CA, Sep 2001.

  • Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, “Power Performance of X-Band Si/SiGe/Si HBTs, ” Silicon Monolithic Integrated Circuits in RF Systems, Ann Arbor, MI, pp. 170-176, Sep. 2001.

  • Saeed Mohammadi, L-H. Lu, Z. Ma, L.P.B. Katehi, P.K. Bhattacharya, G.E. Ponchak and E.T. Croke, “Microwave Noise of Si/Si0.6Ge0.4 Heterojunction Bipolar Transistors,” Silicon Monolithic Integrated Circuits in RF Systems, pp. 15-18, April 2000.

  • J-W. Park, D. Pavlidis, S. Mohammadi, J.L. Guyaux and J-C. Garcia, “Material and processing technology for manufacturing of high speed, high reliability GaInP/GaAs HBT based ICs,” International Conference on GaAs Manufacturing Technology (MANTECH), Vancouver, BC, Canada, PP. 173-176, May 1999.

  • Saeed Mohammadi, J-W. Park, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia,  “Optimal design and experimental characterization of high-gain HBT distributed amplifiers, ” IEEE MTT-S International Microwave Symposium (IMS 99), Anaheim, CA, v. 2, pp. 685-688, June 13-19, 1999.

  • D. Sawdai, D. Pavlidis, S. Mohammadi, “Power amplification using NPN and PNP InP HBTs and application to push-pull circuits,” 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp. 45-46, May 24-27, 1998.

  • J-W. Park, S. Mohammadi, D. Pavlidis, “GaInP/GaAs HBT technology using TBA, TBP precursors and application to optoelectronic circuits,” 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp. 33-34, May 24-27, 1998.

  • Jae-Woo Park, Saeed Mohammadi, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics, ” IEEE MTT-S International Microwave Symposium Digest, IEEE Radio Frequency Integrated Circuits, (RFIC 98), Baltimore, MD, Vol. 1, pp. 39-42, June 7-9, 1998.

  • Saeed Mohammadi, J-W. Park, D.Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers, ” International Electron Device Meeting (IEDM 98), San Fransisco, CA, pp. 661-664 December 6-9, 1998.

  • Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu, “A novel approach for determining reliability of AlGaAs/GaAs single HBTs from low-frequency noise characteristics,” Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen, The Netherlands, May 1997.

  • Jae-Woo Park, D. Pavlidis, S. Mohammadi, C. Dua and J.C. Garcia, “Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy,” Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS 97), San Diego, CA, pp. 439-442, September 7-11, 1997.

  • Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu,  “ Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs HBTs,” Proceedings of the 24th International Symp. on Compound Semiconductors  (ISCS 97), San Diego, CA, pp. 447-450, Sep. 7-11, 1997.

  • B. Bayraktaroglu, G. Dix, S. Mohammadi and D. Pavlidis, “AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise,” GaAs IC Symposium Technical Digest 1997, Anaheim, CA, pp.157-160, October 12-15, 1997.

  • J-C. Garcia, C. Dua, S. Mohammadi and D. Pavlidis, “Hydride-free chemical beam epitaxy processes and application to GaInP/GaAs heterojunction bipolar transistors,” 38th Electronic Material Conference, Santa Barbara, CA, June 1996.