Bozidar Novakovic

Objective:

• Increase tunneling FETs ON current making them feasible for device applications.

Approach:

• Leverage good gate electrostatic control of two-dimensional semiconductor channels.

Results:

• WTe2 TFET outperforms ultrascaled Si MOSFET in SS, DIBL, and energy-delay, while achieving high ON current (350 A/m).
• 2D materials with (0.5-0.7) eV bandgap and lower effective mass most suitable for TFETs.

Publication:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 12-18, Apr. 2015. doi:10.1109/JXCDC.2015.2423096

More info: H. Ilatikhameneh

Self-consistent empirical tight-binding simulations.

Objective:

• Achieve abrupt MOSFET turn on and off by filtering out high energy electrons.

Approach:

• Superlattice-created minigap in the source contact serves as a low-energy filter.
• Removing the tail of the Fermi-Dirac distribution enables increased subthreshold slope (i.e. reduced swing).

Results:

• MOSFETs with supelattice energy filters can achieve high ON currents (390 A/m) and sub-60 mV/dec subthreshold swing.

Publication:

IEEE Electron Device Lett., vol. 35, pp. 1212-1214, Dec. 2014. doi:10.1109/LED.2014.2364593

More info: Pengyu Long

Self-consistent empirical tight-binding simulations.