| B. Novakovic, S. Mehrotra, S. H. Park, D. Valencia, R. Golizadeh, other NEMO5 developers, and G. Klimeck |
June 2013, Aug. 2013, Feb. 2014, Dec. 2015.
 
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Objective:
- Validate NEMO5 device simulation results by comparing them to results from another code with similar functionalities (OMEN).
Approach:
- Representative benchmark examples (NW/UTB MOSFET/TFET).
- NEMO5 and OMEN must 'do the same thing':
- Transport: quantum transport method, empirical tight-binding parameters, electron-hole model.
- Geometry: channel atomic structure cross-section and length.
- Electrostatics: oxide thickness, length, permittivity, source/drain doping, gate potential application.
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Results:
- Quantitatively similar simulations in OMEN and NEMO5 produce quantitatively similar I-V curves.
Impact:
- Removed software and physics model bugs from NEMO5.
- Established confidence in NEMO5 device simulations.
- Allowed official release of NEMO5 for Intel, TSMC.
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