Bozidar Novakovic

NEMO5 device simulation benchmark

B. Novakovic, S. Mehrotra, S. H. Park, D. Valencia, R. Golizadeh, other NEMO5 developers, and G. Klimeck June 2013, Aug. 2013, Feb. 2014, Dec. 2015.

Objective:

  • Validate NEMO5 device simulation results by comparing them to results from another code with similar functionalities (OMEN).

Approach:

  • Representative benchmark examples (NW/UTB MOSFET/TFET).
  • NEMO5 and OMEN must 'do the same thing':
    • Transport: quantum transport method, empirical tight-binding parameters, electron-hole model.
    • Geometry: channel atomic structure cross-section and length.
    • Electrostatics: oxide thickness, length, permittivity, source/drain doping, gate potential application.


Results:

  • Quantitatively similar simulations in OMEN and NEMO5 produce quantitatively similar I-V curves.

Impact:

  • Removed software and physics model bugs from NEMO5.
  • Established confidence in NEMO5 device simulations.
  • Allowed official release of NEMO5 for Intel, TSMC.