Bozidar Novakovic

NEMO5 device simulation benchmark

B. Novakovic, S. Mehrotra, S. H. Park, D. Valencia, R. Golizadeh, other NEMO5 developers, and G. Klimeck June 2013, Aug. 2013, Feb. 2014, Dec. 2015.

Objective:

  • Validate NEMO5 device simulation results by comparing them to results from another code with similar functionalities (OMEN).

Approach:

  • Representative benchmark examples (NW/UTB MOSFET/TFET).
  • NEMO5 and OMEN must 'do the same thing':
    • Transport: quantum transport method, empirical tight-binding parameters, electron-hole model.
    • Geometry: channel atomic structure cross-section and length.
    • Electrostatics: oxide thickness, length, permittivity, source/drain doping, gate potential application.

Results:

  • Quantitatively similar simulations in OMEN and NEMO5 produce quantitatively similar I-V curves.

Impact:

  • Removed software and physics model bugs from NEMO5.
  • Established confidence in NEMO5 device simulations.
  • Allowed official release of NEMO5 for Intel, TSMC.


Bozidar Novakovic's Pages

Biography Time-resolved device characteristics in the ballistic limit Computational efficiency of the time-resolved simulations in the ballistic limit Efficient time-resolved NEGF based quantum transport algorithm Modeling novel steep subthreshold devices for reduced power consumption and short channel effects Fast convergence algorithms for Poisson and transport equations Accurate I-V curves of Si MOSFET and III-V TFET devices Optimal quadrature techniques for device periodic directions. Optimized energy mesh Group Publications

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