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Wide Bandgap Semiconductor Materials Synthesis

The development of wide-band gap compound semiconductors materials and devices are fueling a revolution for energy related applications.  GaN and ZnO, for example, have many superior materials properties compared to conventional semiconductors, as they are mechanically and thermally stable, they can sustain high breakdown voltage, has tunable direct bandgap with a high absorption coefficient. Our current work focuses on exploring GaN and ZnO based materials for high efficient solar cells and other optoelectronic applications.