Pengyu Long

Design and simulation of 2D superlattice steep transistors

Design and simulation of 2D superlattice steep transistors P. Long, M. Povolotskyi, B. Novakovic, T. Kubis, G. Klimeck, M. Rodwell

Objective:

  • Breaking the 60mV/dec limit of the subthreshold slope of transistors.
  • Achieve better on-current than TFET.

Approach:

  • miniband of superlattice used as an energy filter .
  • A 4-barrier InGaAs/InAlAs superlattice is added to the source.
  • Self-consistent ballistic Poisson Quantum Transport simulation with tight-binding basis.

Results:

  • Subthreshold close to 30mV/dec.
  • By engineering the length of the barrier to get maximally flat passband, close to 400A/m on-current is achieved.



 

Pengyu Long's Pages

Biography Atomistic simulation of carrier mobility in nanowires Modeling of AlAsSb barrier InGaAs nMOSFET Suppression of source to drain tunneling in short channel MOSFET Design and simulation of 2D superlattice steep transistors Group Publications

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