Pengyu Long

Atomistic simulation of carrier mobility in nanowires

Atomistic simulation of carrier mobility in nanowires P. Long, S. Mehrotra, M. Povolotskyi & G. Klimeck

Objective:

  • Fast calculation and analysis of carrier mobility in nanowires.

Approach:

  • Semi-empirical tight-binding model coupled to Linearized Boltzmann formalism to calculate mobility in nanowires (based on [1]).
  • Include (acoustic + optical) phonon scattering, surface roughness scattering and alloy scattering in deformation potential approach.

Results:

  • Python based mobility calculation post-processing routine implemented in NEMO5.
  • Benchmarked the mobility model against published results.
  • Typical runtime ~ 10 min.



 

Pengyu Long's Pages

Biography Atomistic simulation of carrier mobility in nanowires Modeling of AlAsSb barrier InGaAs nMOSFET Suppression of source to drain tunneling in short channel MOSFET Design and simulation of 2D superlattice steep transistors