Pengyu Long

Modeling of AlAsSb barrier InGaAs nMOSFET

Modeling of AlAsSb barrier InGaAs nMOSFET P. Long, S. Mehrotra, M. Povolotskyi， G. Klimeck， M. Rodwell

Problem:

  • AlInAs barrier nMOSFET has big barrier injection and confined maximum On-current.

Objective:

  • Use AlAsSb barrier nMOSFET to better confine electrons in the channel.
  • Ef can rise higher before it enters the barrier bands and injection velocity starts to drop.

Approach:

  • Tight binding method used to calculate band structure.
  • Top of the barrier model used to calculate transport.

Results:

  • AlAsSb barrier suppress barrier injection because of better confinement.
  • AlAsSb barrier does not give better on-state current because L valley bands it slows the injection velocity before Ef enters barrier.



 

Pengyu Long's Pages

Biography Atomistic simulation of carrier mobility in nanowires Modeling of AlAsSb barrier InGaAs nMOSFET Suppression of source to drain tunneling in short channel MOSFET Design and simulation of 2D superlattice steep transistors