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Changes in ECE 612 Engineering Faculty Document
No. 51-06 May
10, 2007 TO: The Faculty of the College of Engineering FROM: The Faculty of the School of Electrical and Computer
Engineering RE: ECE 612 Changes in Course Title, Terms Offered,
Prerequisite, Description, and Content The faculty of the
From: ECE
612 – Advanced VLSI Devices Sem. 2. Class 3, cr. 3 (Offered in alternate years.) Prerequisite: ECE 606. Authorized equivalent courses
or consent of instructor may be used in satisfying course pre- and
co-requisites. Device
physics of advanced transistors. Process, device, circuit, and systems
considerations affecting development of new integrated circuit technologies.
Review of metal oxide semiconductor (MOS) fundamentals along with key process
and circuit concepts. Short channel effects in sub-micron channel length metal
oxide semiconductor field-effect transistors (MOSFETs) including device scaling
considerations. Device physics and technology issues for sub-100 nm (nanoscale)
MOSFETs. Limits of silicon device technology and key issues in the continuing
miniaturization of devices. Alternative device structures to replace bulk
MOSFET. Computer simulation employed throughout the course to examine device
issues and prototype new device technologies. To: ECE 612 – Nanoscale Transistors Sem.1, even years. Class 3,
cr. 3 Prerequisite: ECE 606. Prerequisite by Topic: Basic understanding of semiconductor physics, MOSFETs,
and bipolar transistors This course examines
the device physics of advanced transistors and the process, device, circuit,
and systems considerations that enter into the development of new integrated
circuit technologies. The course
consists of three parts. Part 1 treats
MOS and MOSFET fundamentals as well as second order effects such as gate
leakage and quantum mechanical effects.
Short channel effects, device scaling, and circuit and system
considerations are the subject of Part 2.
Part 3 examines new transistor materials and device structures. The use of computer simulation to examine
device issues is an integral part of the course. Reason:
The course description and content have been changed
to reflect the updated content of the course. Mark Smith, Head School of Electrical &
Computer Engineering Engineering Faculty Document No. 51-06 May 10, 2007 Page 1 of 1 ECE 612 – Nanoscale
Transistors Required Text: Yuan Taur and Tak H. Ning, Fundamentals of Modern VLSI Devices, Cambridge Univ. Press, ã1998; ISBN 0-521-55056-4 (hardback) 0-521-55959-6 (paperback). Recommended References: R.F. Pierret, Advanced Semiconductor Fundamentals, 2nd Edition, Prentice Hall, ISBN 0-13-061792-X. Principal
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