Course Changes in ECE 606

                                                                             Engineering Faculty Document No. 50-06

                                                                                                                          May 10, 2007

TO:                 The Faculty of the College of Engineering

FROM:           The Faculty of the School of Electrical and Computer Engineering

RE:                 ECE 606 Changes in Course Title, Terms Offered, Description, Content, and References

The faculty of the School of Electrical and Computer Engineering has approved the following changes in ECE 606. This action is now submitted to the Engineering Faculty with a recommendation for approval.

From:             ECE 606 – Solid State Devices

Sem.1 and 2. Class 3, cr. 3 (Offered in alternate years.)

Prerequisite: Masters Student Standing or higher. Authorized equivalent courses or consent of instructor may be used in satisfying course pre- and co-requisites.   

A relatively-broad, moderate-depth coverage of semiconductor devices and related topics. The first portion of the course presents and examines semiconductor fundamentals required in the operational analysis of solid state devices. A detailed examination of the PN junction diode and PN junction devices follows. The final portion of the course treats heterojunction surface devices including the Schottky diode, the MOS capacitor and the MOSFET.

To:                  ECE 606 – Solid State Devices I

Sem.1 and 2. Class 3, cr. 3

Prerequisite: Graduate Standing.

A relatively-broad moderate-depth coverage of semiconductor devices and related topics.  The first portion of the course presents and examines semiconductor fundamentals required in the operational analysis of microelectronic devices.  Next, PN junction and Metal-Semiconductor diode theory is reviewed, followed by analyses of the Bipolar Junction Transistor (BJT) and Heterojunction Bipolar Transistor (HBT).  The final portion of the course treats the Metal-Oxide-Semiconductor Capacitor (MOS-C) and  Field Effect Transistor (MOSFET).

Reason:          The course description and content have been changed to reflect the updated content of the course.

Mark Smith, Head

School of Electrical & Computer Engineering

                                                            Engineering Faculty Document No. 50-06

                                                                                                                          May 10, 2007

                                                                                                                              Page 1 of 1

ECE 606 – Solid State Devices I

Required Text:  R. F. Pierret, Advanced Semiconductor Fundamentals, Vol. VI in the Modular Series on Solid State Devices, 2^nd edition, Prentice-Hall, ã 2003;  ISBN 0-13-061792-X.
R. F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley, ã 1996;  ISBN 0-201-54393-1.

Recommended References: S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3^rd edition, Wiley Interscience, ã 2007;  ISBN 978-0-471-14323-9

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