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Changes in ECE 453 CourseEngineering Faculty Document No. 37-05 April
27, 2006 TO: The Faculty of the College of Engineering FROM: The Faculty of the School of Electrical and Computer Engineering RE: ECE 453 Changes in Course Description, Prerequisite, and Text The faculty of the From: ECE –
Introduction to Nanoelectronics Sem. 1, Class 3, Cr. 3 Prerequisite: ECE 305 Corequisite: ECE 311. Authorized equivalent courses or consent of instructor may be used in satisfying course pre- and co-requisites. Introduction
to the operating principles of a new class of quantum devices made possible by
revolutionary semiconductor fabrication techniques. Quantum concepts are
emphasized and specific device examples given. To: ECE 453 –
Fundamentals of Nanoelectronics Sem. 1, Class 3, Cr. 3 Prerequisite: MA266 & MA265 or MA262 Prerequisites by topic: Familiarity with matrix algebra, MATLAB, Elementary differential equations. Basic semiconductor device physics. Corequisite: ECE 305. Authorized equivalent courses or consent of instructor may be used in satisfying course prerequisites. The development of "nanotechnology" has made it possible to engineer materials and devices on a length scale as small as several nanometers (atomic distances are ~ 0.1 nm). The properties of such "nanostructures" cannot be described in terms of macroscopic parameters like mobility or diffusion coefficient and a microscopic or atomistic viewpoint is called for. The purpose of this course is to convey the conceptual framework that underlies this microscopic viewpoint using examples related to the emerging field of nanoelectronics. Reason: To provide an updated course description . Mark Smith, Head School of Electrical & Computer Engineering Engineering Faculty Document No. 37-05 April 27, 2006 Page
2 of 3 Required Text(s): Class notes Recommended Reference(s): 1. S. Datta, Quantum Transport: Atom to Transistor, 2. MatLab: Student Version, Current Edition, The MathWorks, Inc. Lecture Outline: All page numbers refer to the recommended reference. Weeks 1 through 5 Pages 1 . An atomistic view of electrical resistance 1-18, 21-27 2 . Schrodinger equation 33-49 Hydrogen atom, Method of finite differences 3. Self-consistent field / Coulomb blockade 18-20, 51-78 One-electron versus the many-electron picture HW#1, 2, 3 , Exam I Weeks 6 through 10 4. Basis functions 81-93 Converting a differential equation to a matrix equation 5. Bandstructure 104-116 Toy examples, general result, common semiconductors 6. Subbands 129-149 Quantum wells, wires, dots and nanotubes Density of states, minimum resistance of a quantum wire HW#4, 5, 6, Exam II Weeks 11 through 15 7. Capacitance: Quantum versus electrostatic 155-176 8. Level broadening 183-213 Self-energy, Local density of states, Lifetime, Golden rule What constitutes a “contact”? 9. Current-voltage characteristics 217-223, 232-248 Coherent transport, Transmission, Green’s function method HW# 7, 8, 9 Atom to transistor 285-318 and new paradigms in nanoelectronics Exam III (Finals week) Course outcomes 1. Ability to perform simple analysis of nanoelectronic devices [1,2;a,k]. Engineering Faculty Document No. 37-05 April 27, 2006 Page
3 of 3 2. Ability to calculate the density of states in nanoelectronic devices [1,2;a,k]. 3. Ability to perform in-depth analysis of nanoelectronic devices [1,2;a,k]. The numbers/letters in the square brackets denote the program objectives/outcomes that the course outcome maps to. Assessment Method for Course Outcomes: Exams I, II and III
respectively. Engineering Design Content: None |
