Sung Geun Kim

Drift Diffusion Simulator Tool Development for MultiGate Field Effect Transistors (MuGFET)

Drift Diffusion Simulator Tool Development for MultiGate Field Effect Transistors (MuGFET) SungGeun Kim, Sriraman Damodaran, Ben Haley, Gerhard Klimeck

Objective:

  • Rappture tool development - drift diffusion simulator for relatively large-sized multigate FET.
  • Understand drift diffusion transport and its application/limitation

Approach:

  • # Utilize available drift diffusion simulator (PROPHET and PADRE)
  • User-friendly input interface implementation via Rappture
  • Energy balance equation for velocity overshoot in small device

Impact:

  • Powerful tool for semiconductor engineers: useful analysis options
  • Significantly reduced simulation time compared to quantum transport simulator

Results:

  • Quantative agreement of simulation result with experiment
  • Significant effects of the velocity overshoot on the on-current , subthreshold slope and transconductance.
  • Effects of Gaussian doping profile on on-current and DIBL/SS : trade-off (characteristic length ↑ : Ion↑ DIBL↓ SS ↑)

Powerpoint slide as ppt, pdf, or as image below.

Sung Geun Kim's Pages

Biography Drift Diffusion Simulator Tool Development for MultiGate Field Effect Transistors (MuGFET) OMEN Nanowire: Rappture(GUI) Tool for Atomistic Simulation of Nanowires OMEN Nanowire: time/memory estimation for various size of nanowires Group Publications

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