Journals (7)
"Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors"
npj 2D Mater Appl 3, 43 (2019);doi:10.1038/s41699-019-0127-12019Not Cited Yet
"Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs"
IEEE Transactions on Nanotechnology (2016);doi:10.1109/TNANO.2016.25834112016Not Cited Yet
"Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method"
Appl. Phys. Lett. 104, 243113 (2014);doi: 10.1063/1.48841992014
"Engineering Nanowire n-MOSFETs at Lg < 8nm"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, Issue: 7, Page(s): 2171 - 2177, July 2013;doi: 10.1109/TED.2013.22638062013Not Cited Yet
"Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors"
Appl. Phys. Lett. 99, 232107 (2011);doi:10.1063/1.36659392011Cited by 1 / 10 Downloads
"Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs"
EEE Transactions on Electron Devices (May 2011) Vol: 58 Issue:5 , Page : 1371 - 1380;doi: 10.1109/TED.2011.21182132011Cited by 33 / 15 Downloads
"On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias"
J. Appl. Phys., Vol. 107, 113701 (2010);doi:10.1063/1.33727642010Cited by 27 / 58 Downloads
Proceedings (5)
"Tunneling: The Major Issue in Ultra-scaled MOSFETs"
IEEE Nano, Rome, Italy, July 26-30, 2015, Pages: 670 - 673;doi:10.1109/NANO.2015.73886942015Not Cited Yet
"More Moore landscape for system readiness-ITRS2. 0 requirements"
32nd IEEE International Conference on Computer Design (ICCD), pp. 147-152, Oct. 2014;doi: 10.1109/ICCD.2014.69746742015Not Cited Yet
"Quantum Corrected Drift-Diffusion Simulation for Prediction of CMOS Scaling"
Device Research Conference, 20132013Not Cited Yet
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 20122012
"Effects of Interface Roughness Scattering on RF Performance of Nanowire Transistors"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland;doi:10.1109/ISDRS.2011.61352992011Not Cited Yet
Conferences (16)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee2018
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin2018
"Tunneling: The Major Issue in Ultra-scaled MOSFETs"
IEEE Nano, Rome, Italy, July 26-30, 20152015
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Arizona State, Electrical Engineering Advanced Semiconductor Device Class, Host: Prof. Dragica Vasileska, April 20, 20152015
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
Synopsys, Oct 18, 2013, Host: Dr. Victor Moroz2013
"Quantum Mechanical Modifications of Drift-diffusion Simulators for Ultra-scaled MOSFETs"
TECHCON, 20132013
"On the Scaling Issues and Possible Solutions for Double Gate MOSFETs at the End of ITRS"
accepted for TECHCON 20132013
"On the Scaling Issues and Solutions for Double Gate MOSFETs at the end of ITRS Roadmap"
accepted for ISDRS 20132013
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 20122012
"Atomistic Simulation of Graphene Transistors"
MSD review May 2012, Boston.2012
"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Advanced Transistor Structures"
MSD/FENA Teleseminar Series, Dec. 15 2011.2011
"Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs"
accepted for presentation at TECHCON 2011;doi:10.1109/TED.2011.21182132011
"Effects of Interface Roughness Scattering on RF Performance of Nanowire Transistors"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland;doi:10.1109/ISDRS.2011.61352992011
"Full 3D Quantum Transport Simulation of Interface Roughness in Nanowire FETs"
American Physical Society, March Meeting, March 15–19, 2010; Portland, Oregon (2010)2010
"OMEN Nanowire : Full-band 3D quantum transport simulation in nanowire structure"
MSD, FCRP Annual Review, Student Poster, MIT, Boston, MA, May 7, 2009. 2009
"MuGFET: MultigateFETssimulated with drift-diffusion models at the nano-scale"
MSD, FCRP Annual Review, Student Poster, MIT, Boston, MA, May 8, 2008.2008