Journals (7)
"Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors"
npj 2D Mater Appl 3, 43 (2019);doi:10.1038/s41699-019-0127-12019Not Cited Yet
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0
"Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs"
IEEE Transactions on Nanotechnology (2016);doi:10.1109/TNANO.2016.25834112016Not Cited Yet
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0
"Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method"
Appl. Phys. Lett. 104, 243113 (2014);doi: 10.1063/1.488419920140
1
"Engineering Nanowire n-MOSFETs at Lg < 8nm"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, Issue: 7, Page(s): 2171 - 2177, July 2013;doi: 10.1109/TED.2013.22638062013Not Cited Yet
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"Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors"
Appl. Phys. Lett. 99, 232107 (2011);doi:10.1063/1.36659392011Cited by 1 / 10 Downloads
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1
"Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs"
EEE Transactions on Electron Devices (May 2011) Vol: 58 Issue:5 , Page : 1371 - 1380;doi: 10.1109/TED.2011.21182132011Cited by 33 / 15 Downloads
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"On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias"
J. Appl. Phys., Vol. 107, 113701 (2010);doi:10.1063/1.33727642010Cited by 27 / 58 Downloads
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Proceedings (5)
"Tunneling: The Major Issue in Ultra-scaled MOSFETs"
IEEE Nano, Rome, Italy, July 26-30, 2015, Pages: 670 - 673;doi:10.1109/NANO.2015.73886942015Not Cited Yet
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"More Moore landscape for system readiness-ITRS2. 0 requirements"
32nd IEEE International Conference on Computer Design (ICCD), pp. 147-152, Oct. 2014;doi: 10.1109/ICCD.2014.69746742015Not Cited Yet
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"Quantum Corrected Drift-Diffusion Simulation for Prediction of CMOS Scaling"
Device Research Conference, 20132013Not Cited Yet
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
1
"Effects of Interface Roughness Scattering on RF Performance of Nanowire Transistors"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland;doi:10.1109/ISDRS.2011.61352992011Not Cited Yet
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0
Conferences (16)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
0
"Tunneling: The Major Issue in Ultra-scaled MOSFETs"
IEEE Nano, Rome, Italy, July 26-30, 201520150
0
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Arizona State, Electrical Engineering Advanced Semiconductor Device Class, Host: Prof. Dragica Vasileska, April 20, 201520150
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
Synopsys, Oct 18, 2013, Host: Dr. Victor Moroz20130
0
"Quantum Mechanical Modifications of Drift-diffusion Simulators for Ultra-scaled MOSFETs"
TECHCON, 201320130
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"On the Scaling Issues and Possible Solutions for Double Gate MOSFETs at the End of ITRS"
accepted for TECHCON 201320130
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"On the Scaling Issues and Solutions for Double Gate MOSFETs at the end of ITRS Roadmap"
accepted for ISDRS 201320130
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
0
"Atomistic Simulation of Graphene Transistors"
MSD review May 2012, Boston.20120
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"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Advanced Transistor Structures"
MSD/FENA Teleseminar Series, Dec. 15 2011.20110
0
"Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs"
accepted for presentation at TECHCON 2011;doi:10.1109/TED.2011.211821320110
0
"Effects of Interface Roughness Scattering on RF Performance of Nanowire Transistors"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland;doi:10.1109/ISDRS.2011.613529920110
0
"Full 3D Quantum Transport Simulation of Interface Roughness in Nanowire FETs"
American Physical Society, March Meeting, March 15–19, 2010; Portland, Oregon (2010)20100
0
"OMEN Nanowire : Full-band 3D quantum transport simulation in nanowire structure"
MSD, FCRP Annual Review, Student Poster, MIT, Boston, MA, May 7, 2009. 20090
0
"MuGFET: MultigateFETssimulated with drift-diffusion models at the nano-scale"
MSD, FCRP Annual Review, Student Poster, MIT, Boston, MA, May 8, 2008.20080
0