Seung Hyun Park

Charge Qubit

Single Impurity Electronics Charge Qubit (P2+) Control Rajib Rahman, Seung Hyun Park, Gerhard Klimeck


  • Establish control & design parameters for charge qubits
  • Determine the range of feasible surface and barrier gate voltages
  • Investigate effects of excited states


  • Surface and Barrier gates modeled by TCAD potentials
  • Coupled impurity potential gives rise to molecular states
  • Surface gates create left/right localized states


  • Smooth voltage control is shown for most configurations
  • At higher voltages, the excited states mingle with the lowest states, limiting the range of operating voltages.
  • Simulation tool for charge qubit experiments & data analysis.

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