Seung Hyun Park

Charge Qubit

Single Impurity Electronics Charge Qubit (P2+) Control Rajib Rahman, Seung Hyun Park, Gerhard Klimeck

Objective:

  • Establish control & design parameters for charge qubits
  • Determine the range of feasible surface and barrier gate voltages
  • Investigate effects of excited states

Approach:

  • Surface and Barrier gates modeled by TCAD potentials
  • Coupled impurity potential gives rise to molecular states
  • Surface gates create left/right localized states

Results/Impact:

  • Smooth voltage control is shown for most configurations
  • At higher voltages, the excited states mingle with the lowest states, limiting the range of operating voltages.
  • Simulation tool for charge qubit experiments & data analysis.


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Seung Hyun Park's Pages

Biography Anisotropic Hyperfine Interaction (AHF) Coherent Transport Adiabatic Passage (CTAP) D- Modeling for As Donors Charge Qubit Control Group Publications

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