Journals (7)
"Performance Comparisons of III-V and strained-Si in Planar FETs and Non-planar FinFETs at Ultra-short Gate Length (12nm)"
IEEE Transactions on Electron Devices, vol. 59, Issue: 8, Page(s): 2107 - 2114, Aug. 2012;doi:10.1109/TED.2012.21984812012Not Cited Yet
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"Stark tuning of the charge states of a two-donor molecule in silicon"
Nanotechnology 22 225202;doi:10.1088/0957-4484/22/22/2252022011Cited by 8 / 2 Downloads
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"Electric field reduced charging energies and two-electron bound excited states of single donors in silicon"
PHYSICAL REVIEW B 84, 115428 (2011)2011Cited by 15 / 7 Downloads
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"Mapping donor electron wave function deformations at sub-Bohr orbit resolution"
Phys. Rev. Lett., Vol. 103, 106802 (2009);doi:10.1103/PhysRevLett.103.1068022009Cited by 9 / 21 Downloads
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"Atomistic simulations of adiabatic coherent electron transport in triple donor systems"
Phys. Rev. B, Vol. 80, 035302 (2009);doi:10.1103/PhysRevB.80.0353022009Cited by 24 / 98 Downloads
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"Orbital Stark effect and quantum confinement transition of donors in silicon"
Phys. Rev. B, Vol. 80, 098936 (2009) arXiv 0904.4281 ;doi:10.1103/PhysRevB.80.1653142009Cited by 54 / 89 Downloads
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"Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors"
Physical Review B, Vol. 80 134935 (2009);doi:10.1103/PhysRevB.80.1553012009Cited by 2 / 16 Downloads
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Proceedings (2)
"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013Not Cited Yet
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"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011Cited by 1 / 26 Downloads
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Conferences (14)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
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"Discrete random distribution of source dopants in nanowire tunnel transistors (TFETs)"
APS March Meeting, March 18-22, 2013, Baltimore, Maryland.20130
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"Million-Atom Electronic Structure Simulations for Realistically Large Si-Based Quantum Devices"
International Workshop On Silicon Quantum Electronics, Chowder Bay, Sydney, Feb 13-14, 2012.20120
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"What is different below 10 nm?"
Invited presentation at the NNIN Symposium on Frontiers in Nanoscale Transistors and Electronics, Santa Barbara, CA, February 6, 2012.20120
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"Performance Comparison of InGaAs and strained-Si in Planar and Non-planar FETs at Ultra-short Gate Length (12nm)"
20120
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"Contact-to-channel Resistance Modeling in HEMT Devices"
MSD review May 2012, Boston. 20120
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"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Advanced Transistor Structures"
MSD/FENA Teleseminar Series, Dec. 15 2011.20110
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"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea20110
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"Contact Modeling in HEMT Devices"
MSD/ FCRP Annual Review, Student Poster, MIT, Boston, MA, May 10-11, 2011.20110
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"Contact Modeling and Performance Analysis of InAs HEMT Architecture"
accepted for presentation at TECHCON 201120110
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"Atomistic Modeling of Ultra-Scaled Devices"
Globalfoundries Workshop on III-V devices for high performance logic, Nov. 2 2010, Host: Dr. Witek Maszara.20100
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"B-field verification in OMEN-3D"
TECHCON 2009 to be held at the Renaissance Hotel in Austin, Texas, September 14 - 15, 2009.20090
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"Million-Atom Electronic Structure Simulations for Realistically Large Si-Based Quantum Devices"
Univeristy of California Berkeley, Aug. 24-25, 2009. 20090
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Others (2)
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 19-20, 2010.20100
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"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 21-22, 2009. 20090
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