Journals (7)
"Performance Comparisons of III-V and strained-Si in Planar FETs and Non-planar FinFETs at Ultra-short Gate Length (12nm)"
IEEE Transactions on Electron Devices, vol. 59, Issue: 8, Page(s): 2107 - 2114, Aug. 2012;doi:10.1109/TED.2012.21984812012Not Cited Yet
"Stark tuning of the charge states of a two-donor molecule in silicon"
Nanotechnology 22 225202;doi:10.1088/0957-4484/22/22/2252022011Cited by 8 / 2 Downloads
"Electric field reduced charging energies and two-electron bound excited states of single donors in silicon"
PHYSICAL REVIEW B 84, 115428 (2011)2011Cited by 15 / 7 Downloads
"Mapping donor electron wave function deformations at sub-Bohr orbit resolution"
Phys. Rev. Lett., Vol. 103, 106802 (2009);doi:10.1103/PhysRevLett.103.1068022009Cited by 9 / 21 Downloads
"Atomistic simulations of adiabatic coherent electron transport in triple donor systems"
Phys. Rev. B, Vol. 80, 035302 (2009);doi:10.1103/PhysRevB.80.0353022009Cited by 24 / 98 Downloads
"Orbital Stark effect and quantum confinement transition of donors in silicon"
Phys. Rev. B, Vol. 80, 098936 (2009) arXiv 0904.4281 ;doi:10.1103/PhysRevB.80.1653142009Cited by 54 / 89 Downloads
"Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors"
Physical Review B, Vol. 80 134935 (2009);doi:10.1103/PhysRevB.80.1553012009Cited by 2 / 16 Downloads
Proceedings (2)
"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013Not Cited Yet
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011Cited by 1 / 26 Downloads
Conferences (14)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee2018
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin2018
"Discrete random distribution of source dopants in nanowire tunnel transistors (TFETs)"
APS March Meeting, March 18-22, 2013, Baltimore, Maryland.2013
"Million-Atom Electronic Structure Simulations for Realistically Large Si-Based Quantum Devices"
International Workshop On Silicon Quantum Electronics, Chowder Bay, Sydney, Feb 13-14, 2012.2012
"What is different below 10 nm?"
Invited presentation at the NNIN Symposium on Frontiers in Nanoscale Transistors and Electronics, Santa Barbara, CA, February 6, 2012.2012
"Performance Comparison of InGaAs and strained-Si in Planar and Non-planar FETs at Ultra-short Gate Length (12nm)"
2012
"Contact-to-channel Resistance Modeling in HEMT Devices"
MSD review May 2012, Boston. 2012
"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Advanced Transistor Structures"
MSD/FENA Teleseminar Series, Dec. 15 2011.2011
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011
"Contact Modeling in HEMT Devices"
MSD/ FCRP Annual Review, Student Poster, MIT, Boston, MA, May 10-11, 2011.2011
"Contact Modeling and Performance Analysis of InAs HEMT Architecture"
accepted for presentation at TECHCON 20112011
"Atomistic Modeling of Ultra-Scaled Devices"
Globalfoundries Workshop on III-V devices for high performance logic, Nov. 2 2010, Host: Dr. Witek Maszara.2010
"B-field verification in OMEN-3D"
TECHCON 2009 to be held at the Renaissance Hotel in Austin, Texas, September 14 - 15, 2009.2009
"Million-Atom Electronic Structure Simulations for Realistically Large Si-Based Quantum Devices"
Univeristy of California Berkeley, Aug. 24-25, 2009. 2009
Others (2)
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 19-20, 2010.2010
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 21-22, 2009. 2009