Interface Roughness in Nanowire FETs

Effects of Local Rough Interface on Current Characteristics in Nanowire FETs

Objective:

  • Study the local effect of interface roughness on the transport characteristics of nanowire FETs

Approach:

  • Tight-binding approximation(sp3d5s*)
  • Wave-function formalism
  • Atomistically created interface roughness with VCA modeling of oxide
  • Local rough surface created from the source side of the channel to the drain side

Impact:

  • The surface quality of source side of the channel is more important than the drain side to reduce interface roughness scattering

Results:

  • Reduction of velocity due to IR scattering is larger in the source side of the channel than that in the drain side of the channel
  • ON-current reduction is larger in the source side channel and saturated in the drain side of the channel

Group member involved:



Ultra-Scaled FETs

MUGFETs Home Interface roughness scattering Home Interface Roughness Effects on Current Characteristics in Si Nanowire Transistors Interface Roughness Effects on Transmission and Electron Density in Si Nanowire Transistors Interface Roughness Effects on Mobility in Si Nanowire Transistors Interface Roughness Effects on RF-performance in Si Nanowire Transistors