Interface Roughness in Nanowire FETs

Interface Roughness Effect on Current Characteristics in Nanowire FETs

Objective:

  • Study the effect of interface roughness on the transport characteristics of nanowire FETs

Approach:

  • Tight-binding approximation(sp3d5s*)
  • Wave-function formalism
  • Atomistically created interface roughness
  • Wave function penetration into oxide

Impact:

  • Interface roughness scattering (IRS) is essential to predict the threshold voltage in NWFETs with diameter 2.5 nm and below.
  • IRS is important in understanding the decreasing trend of ON-current at small diameter nanowire FETs

Results:

  • Threshold voltage increase/ON-current decrease due to IRS
  • Current spectra reduction due to IRS and its relationship to DOS localization

Group member involved:



Ultra-Scaled FETs

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