Nanowire is a wire-like nanoscale structure whose diameter is on the order of nanometer. Our research interests are mainly focused on the semiconductor nanowires used as various electronic devices. As the nanowire transistor is a strong candidate for replacing the conventional planar MOSFET, we are vastly investigating the electronic properties of nanowires. We are particularly interested in the scattering of electrons due to the rough interface between silicon and silicon dioxide. A full 3D quantum transport simulator OMEN based on the atomistic sp3d5s* tight-binding model is used for our study.
Major Projects in this area:
- Interface Roughness Effects on Current Characteristics in Si Nanowire Transistors
- Interface Roughness Effects on Transmission and Electron Density in Si Nanowire Transistors
- Interface Roughness Effects on Mobility in Si Nanowire Transistors
- Interface Roughness Effects on RF-performance in Si Nanowire Transistors