Interface Roughness in Nanowire FETs


Nanowire is a wire-like nanoscale structure whose diameter is on the order of nanometer. Our research interests are mainly focused on the semiconductor nanowires used as various electronic devices. As the nanowire transistor is a strong candidate for replacing the conventional planar MOSFET, we are vastly investigating the electronic properties of nanowires. We are particularly interested in the scattering of electrons due to the rough interface between silicon and silicon dioxide. A full 3D quantum transport simulator OMEN based on the atomistic sp3d5s* tight-binding model is used for our study.

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