Interface Roughness in Nanowire FETs

Interface Roughness Effects on Transmission and Electron Density

Objective:

  • Study the effect of interface roughness on the transmission and electron density

Approach:

  • Generate atomistic interface roughness with different seeds
  • Conduct quantum transport calculation for each sample
  • Compare the drain current for each sample at ON-state

Impact:

  • Reveal the effect of roughness on transport properties of nanowires

Results:

  • Transmission reduction throughout the whole energy range
  • Nanowire with the smallest current shows the largest reduction of transmission
  • Nanowire with the smallest current shows the largest localization of electrons in space

Group member involved:



Ultra-Scaled FETs

MUGFETs Home Interface roughness scattering Home Interface Roughness Effects on Current Characteristics in Si Nanowire Transistors Interface Roughness Effects on Transmission and Electron Density in Si Nanowire Transistors Interface Roughness Effects on Mobility in Si Nanowire Transistors Interface Roughness Effects on RF-performance in Si Nanowire Transistors