Interface Roughness in Nanowire FETs

Interface Roughness Effect on Mobility in Nanowire FETs


  • Study the effect of interface roughness on the electron mobility in nanowire FETs


  • Tight-binding approximation(sp3d5s*)
  • Wave-function formalism
  • Atomistically created interface roughness with VCA modeling for oxide



  • Interface roughness scattering (IRS) reduces the mobility more in smaller diameter nanowire
  • IRS introduces a large variability especially in interface roughness with large RMS height


  1. decreasing mobility in large ∆m
  2. decreasing mobility in small diameter
  3. increasing variability in large ∆m
  4. Comparison with experiment: effective mobility

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