Interface Roughness in Nanowire FETs

Interface Roughness Effect on Mobility in Nanowire FETs

Objective:

  • Study the effect of interface roughness on the electron mobility in nanowire FETs

Approach:

  • Tight-binding approximation(sp3d5s*)
  • Wave-function formalism
  • Atomistically created interface roughness with VCA modeling for oxide

 

Impact:

  • Interface roughness scattering (IRS) reduces the mobility more in smaller diameter nanowire
  • IRS introduces a large variability especially in interface roughness with large RMS height

Results:

  1. decreasing mobility in large ∆m
  2. decreasing mobility in small diameter
  3. increasing variability in large ∆m
  4. Comparison with experiment: effective mobility

Group member involved:



Ultra-Scaled FETs

MUGFETs Home Interface roughness scattering Home Interface Roughness Effects on Current Characteristics in Si Nanowire Transistors Interface Roughness Effects on Transmission and Electron Density in Si Nanowire Transistors Interface Roughness Effects on Mobility in Si Nanowire Transistors Interface Roughness Effects on RF-performance in Si Nanowire Transistors