Multi-Gate FETs

Effect of Gaussian Doping Profile on Current-Voltage Characteristics

Objective:

  • Estimation of the effect of Gaussian doping profile on the current-voltage characteristics

Approach:

  • Change the characteristic length of the Gaussian doping profile
  • Calculate the drain current, the electron density, and the electrostatic potential profile

Results/Impact:

  • Longer characteristic length
    • doping density in the channel increased
    • the potential in the channel decreased
    • the drain current increased

Group member involved:

Drift diffusion simulator MuGFET

MUGFETS Home Drift diffusion simulator Home Comparison of Experimental Data with Simulation Results from MuGFET Short Channel Effect in MuGFET GUI Development of Drift-Diffusion Simulator for MuGFET Effect of Gaussian Doping Profile on Current-Voltage Characteristics