| Multi-gate field effect transistors are particularly attractive to engineers because of its good gate-controllability on the electron transport compared to the conventional planar MOSFET. Since the size of devices in these days is still too large for any quantum transport simulator to get us the results in a few minutes, using drift-diffusion simulator is a good option for device designers. MuGFET is a graphical user interface developed on nanoHUB.org to enable scientists and engineers to model multi-gate field effect transistors with drift diffusion simulator PROPHET and PADRE. It has various functionalities to enhance the flexibility in designing transistors. By comparison with experiment, it proves itself to be accurate in modeling nanoscale multi-gate transistors. |
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