Multi-Gate FETs

Comparison of Experimental Data with Simulation Results from MuGFET

Objective:

Approach:

  • Compare Id-Vg characteristics in relatively large devices
  • Compare experimental data with PADRE and PROPHET results

Impact:

  • Validation of the drift-diffusion simulator MuGFET in relatively large devices

Results/

  • Subthreshold slope matching for p-type finFET with the gate length 45 or 60 nm
  • Underestimation of the ON-current due to hot-carrier transport in real devices

Group member involved:

Drift diffusion simulator MuGFET

MUGFETS Home Drift diffusion simulator Home Comparison of Experimental Data with Simulation Results from MuGFET Short Channel Effect in MuGFET GUI Development of Drift-Diffusion Simulator for MuGFET Effect of Gaussian Doping Profile on Current-Voltage Characteristics