Atomistic Simulation of Vertical TFET with Broken Gap Materials
| Atomistic Simulation of Vertical TFET with Broken Gap Materials | Zhengping Jiang, Hong Hyun Park, Tillmann Kubis, Gerhard Klimeck |
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Objective: •Understanding tunneling in vertical gate TFET (Notre Dame fabricated)
•Provide design guideline to sub-20nm transistors
•Optimize nTFET performance
•Effects of phonon scattering on device performance
Approach: •Atomistic description: multi-dim.
•Semi-classical & Quantum
•Effective mass & tight-binding
•Ballistic & deformation-potential scattering
•NEGF & open-bnd. wavefunctions
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Results / Impact: •Evaluate nTFET performance in ballistic limit for different dimensions
•Effects of bandgap modification due to confinement
•Origin of ambipolar current in nTFET
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Powerpoint slide as ppt, pdf, or as image below.
Powerpoint slide as ppt, pdf, or as image below.
