Zhengping Jiang

Atomistic Simulation of Vertical TFET with Broken Gap Materials

Atomistic Simulation of Vertical TFET with Broken Gap Materials Zhengping Jiang, Hong Hyun Park, Tillmann Kubis, Gerhard Klimeck

Objective:

•Understanding tunneling in vertical gate TFET (Notre Dame fabricated)
•Provide design guideline to sub-20nm transistors
•Optimize nTFET performance
•Effects of phonon scattering on device performance

Approach:

•Atomistic description: multi-dim.
•Semi-classical & Quantum
•Effective mass & tight-binding
•Ballistic & deformation-potential scattering
•NEGF & open-bnd. wavefunctions

Results / Impact:

•Evaluate nTFET performance in ballistic limit for different dimensions
•Effects of bandgap modification due to confinement
•Origin of ambipolar current in nTFET

Powerpoint slide as ppt, pdf, or as image below.

Powerpoint slide as ppt, pdf, or as image below.