Journals (12)
"NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law"
arXiv:1510.046862015Not Cited Yet
"Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network"
Physical Review Applied 9 (4), 044005;doi: 10.1103/PhysRevApplied.9.0440052018Not Cited Yet
"Performance degradation of superlattice MOSFETs due to scattering in the contacts"
Journal of Applied Physics, Vol 120, 224501, December 2016;doi: 10.1063/1.49713412016Not Cited Yet
"Surface Passivation in Empirical Tight Binding"
IEEE TRANSACTIONS ON ELECTRON DEVICES VOL. 63, Issue: 3, Page(s): 954 - 958, February (2016);doi:10.1109/TED.2016.25190422016Not Cited Yet
"Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, Issue: 8, Page(s): 2445 - 2449, AUGUST 2015;doi: 10.1109/TED.2015.24435642016Not Cited Yet
"Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs"
IEEE Transactions on Electron Devices, Volume:62, Issue: 2, Page(s): 525 - 531, Feb. 2015;doi:10.1109/TED.2014.23833922015
"Anisotropic strain in SmSe and SmTe: Implications for electronic transport"
Phys. Rev. B 90, 245124, Published 15 December 2014;doi:10.1103/PhysRevB.90.2451242014
"Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors"
Published online 23 January 2014, J. Appl. Phys. 115, 044502 (2014);doi: 10.1063/1.48620422013
"Electron transport in nano-scaled piezoelectronic devices"
Appl. Phys. Lett. 102, 193501 (2013);doi:10.1063/1.48046012013
"Efficient and realistic device modeling from atomic detail to the nanoscale"
Journal of Computational Electronics December 2013, Volume 12, Issue 4, pp 592-600;doi:10.1007/s10825-013-0509-02013
"Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping"
Journal of Computational Electronics, January 2013;doi:10.1007/s10825-013-0436-02013
"Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells"
Applied Physics Letters Vol100 issue10, Mar 6, 2012;doi: 10.1063/1.36921742012Cited by 7 / 15 Downloads
Proceedings (6)
"Grain boundary resistance in nanoscale copper interconnections"
Simulation of Semiconductor Processes and Devices (SISPAD), 20162016Not Cited Yet
"Atomistic Simulation on Gate-recessed InAs/GaSb TFETs and Performance Benchmark"
Device Research Conference (DRC),Page(s): 145 - 146, June 2013, Notre Dame, IN, USA;doi: 10.1109/DRC.2013.66338352013Not Cited Yet
"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013Not Cited Yet
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 20122012
"Valley Degeneracy in (110) Si Quantum Wells - Strain and Misorientation Effects"
Proceedings of the International Workshop for Computational Electronics, Pisa, Italy, October 2010;doi:10.1109/IWCE.2010.56779642010Not Cited Yet
"Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.Page(s):1-4;doi:10.1109/IWCE.2009.50911172009
Conferences (25)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee2018
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin2018
"Grain Boundary Resistance in Nanoscale Copper Interconnections"
International Conference on Simulation of Semiconductor Processes and Devices 2016, Nuremberg, Germany, September 6-82016
"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 20152015
"Multi-Scale Quantum Simulations of Conductive Bridging RAM"
Oral presentation, 18th International Workshop on Computational Electronics, West Lafayette, Indiana, September 2-4, 20152015
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
Synopsys, Oct 18, 2013, Host: Dr. Victor Moroz2013
"Tight-Binding Modeling of Intermediate Valence Compound SmSe for Piezoelectronic Devices"
16th International Workshop on Computational Electronics (IWCE), June 2013, Nara, Japan2013
"Atomistic Modeling of CBRAM Switching Behavior"
2013 FAME (Function Accelerated nanoMaterial Engineering) Annual Review, poster presentation, Oct. 15 & 16, 2013, Los Angeles, CA2013
"Atomistic, Multi-Scale, Multi-Physics Modeling of Extended Si Quantum Devices – Outreach Opportunities for CQCT"
CQCT Workshop, Chowder Bay, Sydney, Feb 15-16, 2012.2012
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 20122012
"Quantum Transport in Tunneling Field Effect Transistors"
MIND review, student poster, South Bend, IN, Aug. 20122012
"Atomistic Simulation of GaSb/InAs Tunneling Field Effect Transistor"
TECHCON ,September 10-11 2012, Austin TX2012
"Contact-to-channel Resistance Modeling in HEMT Devices"
MSD review May 2012, Boston. 2012
"Quantum Transport in GaSb/InAs Nanowire TFET with Semiclassical Charge Density"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison2012
"Atomistic, Multi-Scale, Multi-Physics Modeling of Extended Si Quantum Devices"
Center for Quantum Computing (CQCT) 2011 Annual Workshop, The Seargents Mess, Chowder Bay,Sydney. Feb 15-16, 2011.2011
"Atomistic Quantum Transport Modeling in Band-to-band Tunneling Transistors"
MIND review, student poster, South Bend, IN, Aug. 20112011
"Effects of disorder on the valley-splitting in Si/SiGe quantum wells"
International Workshop on Silicon Quantum Electronics, oral presentation, Denver, CO, Aug. 14-15, 20112011
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 20112011
"Valley Degeneracy in (110) Si Quantum Wells - Strain and Misorientation Effects"
International Workshop for Computational Electronics, Pisa, Italy, October 20102010
"Valley Degeneracy in (110) Si Quantum Wells: Strain and Misorientation Effects"
International Workshop for Computational Electronics, October 27th-29th,2010, Pisa, Italy2010
"Modeling of SiGe material for ultra-scaled CMOS device applications"
MSD, FCRP Annual Review, Student Poster, MIT, Boston, MA, May 5-6, 20102010
"Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers"
13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009; doi:10.1109/IWCE.2009.50911172009
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali, Maui, Nov. 29-Dec. 4, 2009.2009
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
Univeristy of California Berkeley, Aug. 24-25, 2009. 2009
Others (6)
"Tunnel transistors"
2016
"Quantum Transport in Tunneling Field Effect Transistors"
Nanoelectronic Research Initiative (NRI) review, MIND center (Midwest Institute for Nanoelectronics Discovery), Notre Dame, Aug. 15, 20122012
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 16-17, 20112011
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 2011.2011
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 19-20, 2010.2010
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 21-22, 2009. 2009