Journals (12)
"NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law"
arXiv:1510.046862015Not Cited Yet
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0
"Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network"
Physical Review Applied 9 (4), 044005;doi: 10.1103/PhysRevApplied.9.0440052018Not Cited Yet
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0
"Performance degradation of superlattice MOSFETs due to scattering in the contacts"
Journal of Applied Physics, Vol 120, 224501, December 2016;doi: 10.1063/1.49713412016Not Cited Yet
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"Surface Passivation in Empirical Tight Binding"
IEEE TRANSACTIONS ON ELECTRON DEVICES VOL. 63, Issue: 3, Page(s): 954 - 958, February (2016);doi:10.1109/TED.2016.25190422016Not Cited Yet
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"Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, Issue: 8, Page(s): 2445 - 2449, AUGUST 2015;doi: 10.1109/TED.2015.24435642016Not Cited Yet
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"Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs"
IEEE Transactions on Electron Devices, Volume:62, Issue: 2, Page(s): 525 - 531, Feb. 2015;doi:10.1109/TED.2014.238339220150
2
"Anisotropic strain in SmSe and SmTe: Implications for electronic transport"
Phys. Rev. B 90, 245124, Published 15 December 2014;doi:10.1103/PhysRevB.90.24512420140
1
"Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors"
Published online 23 January 2014, J. Appl. Phys. 115, 044502 (2014);doi: 10.1063/1.486204220130
11
"Electron transport in nano-scaled piezoelectronic devices"
Appl. Phys. Lett. 102, 193501 (2013);doi:10.1063/1.480460120130
8
"Efficient and realistic device modeling from atomic detail to the nanoscale"
Journal of Computational Electronics December 2013, Volume 12, Issue 4, pp 592-600;doi:10.1007/s10825-013-0509-020130
21
"Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping"
Journal of Computational Electronics, January 2013;doi:10.1007/s10825-013-0436-020130
10
"Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells"
Applied Physics Letters Vol100 issue10, Mar 6, 2012;doi: 10.1063/1.36921742012Cited by 7 / 15 Downloads
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Proceedings (6)
"Grain boundary resistance in nanoscale copper interconnections"
Simulation of Semiconductor Processes and Devices (SISPAD), 20162016Not Cited Yet
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"Atomistic Simulation on Gate-recessed InAs/GaSb TFETs and Performance Benchmark"
Device Research Conference (DRC),Page(s): 145 - 146, June 2013, Notre Dame, IN, USA;doi: 10.1109/DRC.2013.66338352013Not Cited Yet
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"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013Not Cited Yet
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
1
"Valley Degeneracy in (110) Si Quantum Wells - Strain and Misorientation Effects"
Proceedings of the International Workshop for Computational Electronics, Pisa, Italy, October 2010;doi:10.1109/IWCE.2010.56779642010Not Cited Yet
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"Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.Page(s):1-4;doi:10.1109/IWCE.2009.509111720090
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Conferences (25)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
0
"Grain Boundary Resistance in Nanoscale Copper Interconnections"
International Conference on Simulation of Semiconductor Processes and Devices 2016, Nuremberg, Germany, September 6-820160
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"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 201520150
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"Multi-Scale Quantum Simulations of Conductive Bridging RAM"
Oral presentation, 18th International Workshop on Computational Electronics, West Lafayette, Indiana, September 2-4, 201520150
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
Synopsys, Oct 18, 2013, Host: Dr. Victor Moroz20130
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"Tight-Binding Modeling of Intermediate Valence Compound SmSe for Piezoelectronic Devices"
16th International Workshop on Computational Electronics (IWCE), June 2013, Nara, Japan20130
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"Atomistic Modeling of CBRAM Switching Behavior"
2013 FAME (Function Accelerated nanoMaterial Engineering) Annual Review, poster presentation, Oct. 15 & 16, 2013, Los Angeles, CA20130
0
"Atomistic, Multi-Scale, Multi-Physics Modeling of Extended Si Quantum Devices – Outreach Opportunities for CQCT"
CQCT Workshop, Chowder Bay, Sydney, Feb 15-16, 2012.20120
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
0
"Quantum Transport in Tunneling Field Effect Transistors"
MIND review, student poster, South Bend, IN, Aug. 201220120
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"Atomistic Simulation of GaSb/InAs Tunneling Field Effect Transistor"
TECHCON ,September 10-11 2012, Austin TX20120
0
"Contact-to-channel Resistance Modeling in HEMT Devices"
MSD review May 2012, Boston. 20120
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"Quantum Transport in GaSb/InAs Nanowire TFET with Semiclassical Charge Density"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
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"Atomistic, Multi-Scale, Multi-Physics Modeling of Extended Si Quantum Devices"
Center for Quantum Computing (CQCT) 2011 Annual Workshop, The Seargents Mess, Chowder Bay,Sydney. Feb 15-16, 2011.20110
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"Atomistic Quantum Transport Modeling in Band-to-band Tunneling Transistors"
MIND review, student poster, South Bend, IN, Aug. 201120110
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"Effects of disorder on the valley-splitting in Si/SiGe quantum wells"
International Workshop on Silicon Quantum Electronics, oral presentation, Denver, CO, Aug. 14-15, 201120110
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"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 201120110
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"Valley Degeneracy in (110) Si Quantum Wells - Strain and Misorientation Effects"
International Workshop for Computational Electronics, Pisa, Italy, October 201020100
0
"Valley Degeneracy in (110) Si Quantum Wells: Strain and Misorientation Effects"
International Workshop for Computational Electronics, October 27th-29th,2010, Pisa, Italy20100
0
"Modeling of SiGe material for ultra-scaled CMOS device applications"
MSD, FCRP Annual Review, Student Poster, MIT, Boston, MA, May 5-6, 201020100
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"Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers"
13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009; doi:10.1109/IWCE.2009.50911172009188
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"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali, Maui, Nov. 29-Dec. 4, 2009.20090
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"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
Univeristy of California Berkeley, Aug. 24-25, 2009. 20090
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Others (6)
"Tunnel transistors"
20160
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"Quantum Transport in Tunneling Field Effect Transistors"
Nanoelectronic Research Initiative (NRI) review, MIND center (Midwest Institute for Nanoelectronics Discovery), Notre Dame, Aug. 15, 201220120
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"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 16-17, 201120110
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 2011.20110
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 19-20, 2010.20100
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Minneapolis, August 21-22, 2009. 20090
0