Saima Sharmin

Design optimization of polarization-engineered ІII-Nitride tunnel FETs

OBJECTIVE:

  • Study the effect of strong scattering at quasi-bound states of Nitride TFETs.

APPROACH:

  • Divide into 3 regions:
    1. Scattering region 1
    2. Ballistic region (at center)
    3. Scattering region 2
  • Add broadening to the inverse Green's function of scattering regions

RESULTS:

  • Current density is very sensitive to the position of the ballistic region.
  • Underestimation of tunneling probability in absence of scattering.

Powerpoint slide as pdf.