Journals (1)
"Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors"
IEEE Journal of Exploratory Solid-State Computational Devices and Circuits, Volume:1, Pages: 28 - 34, Dec. 2015;doi:10.1109/JXCDC.2015.242643320150
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Proceedings (2)
"Novel III-N heterostructure devices for low-power logic and more"
Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on(pp. 767-769). IEEE;doi:10.1109/NANO.2016.77513362016Not Cited Yet
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"Atomistic Simulation of GaN/InN/GaN Tunnel FETs"
Berkeley Symposium on Energy Efficient Electronic Systems, 20132013Not Cited Yet
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Conferences (7)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
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"Novel III-N heterostructure devices for low-power logic and more"
2016 IEEE 16th International Conference on Environment and Electrical Engineering, Florence, Italy, 2016 20160
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"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 201520150
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"Transport characteristics of Nitride TFETs: Ballistic versus scattering"
2015 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 & 13, 2015 , University of Notre Dame.20150
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"Atomistic Tight-binding Modeling of III-Nitride Materials and Field Effect Transistors"
2014 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 - 14, 2014 , University of Notre Dame.20140
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"Atomistic Modeling of Nitride Devices"
2013 LEAST (Center for Low Energy Systems Technology) Annual Review, August 14 & 15, 2013 , University of Notre Dame.20130
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