Journals (1)
"Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors"
IEEE Journal of Exploratory Solid-State Computational Devices and Circuits, Volume:1, Pages: 28 - 34, Dec. 2015;doi:10.1109/JXCDC.2015.24264332015
Proceedings (2)
"Novel III-N heterostructure devices for low-power logic and more"
Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on(pp. 767-769). IEEE;doi:10.1109/NANO.2016.77513362016Not Cited Yet
"Atomistic Simulation of GaN/InN/GaN Tunnel FETs"
Berkeley Symposium on Energy Efficient Electronic Systems, 20132013Not Cited Yet
Conferences (7)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee2018
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin2018
"Novel III-N heterostructure devices for low-power logic and more"
2016 IEEE 16th International Conference on Environment and Electrical Engineering, Florence, Italy, 2016 2016
"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 20152015
"Transport characteristics of Nitride TFETs: Ballistic versus scattering"
2015 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 & 13, 2015 , University of Notre Dame.2015
"Atomistic Tight-binding Modeling of III-Nitride Materials and Field Effect Transistors"
2014 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 - 14, 2014 , University of Notre Dame.2014
"Atomistic Modeling of Nitride Devices"
2013 LEAST (Center for Low Energy Systems Technology) Annual Review, August 14 & 15, 2013 , University of Notre Dame.2013