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Parijat Sengupta
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Numerical study of surface states of 3D-TI materials
Numerical study of surface states of 3D-TI materials
Parijat Sengupta's Pages
Biography
3D 8 band k.p MPI parallelized C++ simulator.
Design principles for HgTe-based TI devices.
Electronic structure calculation for broken-gap devices.
Topological insulator with an GaN/InN/GaN heterostructure.
Numerical study of surface states of 3D-TI materials.
Comparison between 20-band TB and 8-band k.p for ZB QDs.
3D-TI based nanowires.
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