Parijat Sengupta

Design principles for HgTe-based TI devices

Parijat Sengupta's Pages

Biography 3D 8 band k.p MPI parallelized C++ simulator. Design principles for HgTe-based TI devices. Electronic structure calculation for broken-gap devices. Topological insulator with an GaN/InN/GaN heterostructure. Numerical study of surface states of 3D-TI materials. Comparison between 20-band TB and 8-band k.p for ZB QDs. 3D-TI based nanowires. Group Publications

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