Neerav Kharche

Objective:

• Explain experimentally observed suppression in valley-splitting in miscut (100) Si QWs
• Study effect of alloy disorder and step roughness at Si/SiGe interface on the electronic structure

Approach:

• Model miscut Si QWs along with SiGe buffers to include strain and atomistic alloy disorder in SiGe buffer
• Strain relaxation: VFF-Keating
• Magnetic field: Peierl’s substitution
• Step roughness: replicate experimentally observed surface morphology on the atomistic grid

Impact:

• Alloy disorder in SiGe and step roughness at Si/SiGe interface is crucial to accurately model valley-splitting
• Model predicts experimentally observed valley-splitting without any ad-hoc fitting parameters
• Publication [J79]