Jun Huang

Jun Huang's Biography

Jun Huang obtained his Ph.D degree from The University of Hong Kong (HKU) in 2013, M.E. degree from Shanghai Jiao Tong University in 2010, and B.E. degree from Nankai University in 2004, all in electrical engineering. From December 2008 to November 2009, he worked as a full-time Research Assistant in Department of Electrical and Electronic Engineering, HKU. From September 2012 to May 2013, he was a visiting scholar in Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign.

During his Ph.D., he developed a few methods for efficient quantum transport simulations and applied them to study nanoscale MOSFETs and Tunnel FETs. His Ph.D. thesis can be found here: https://nanohub.org/resources/20248/. During his master degree study, he worked on compact modeling of carbon nanotube transistors. He also has research experience on simulation, fabrication, and measurement of broadband microstrip antennas.

Since December 2013, he has been a Postdoctoral Researcher in Professor Gerhard Klimeck's group, Purdue University, where he has been involved in the following projects

  • Stable and general K.P method for electronic structure and quantum transport calculation (P1) (quad chart)
  • Tight binding mode space approach for efficient quantum transport simulation of nanoelectronic devices (P2)
  • Quantum transport simulation of III-V TFETs with reduced-order k.p method
  • Design and simulation of GaSb/InAs 2D transmission-enhanced tunneling FETs(J1)
  • P-Type Tunnel FETs With Triple Heterojunctions(quad chart)
  • Exploring Channel Doping Designs for High-Performance Tunneling FETs(quad chart)
  • Mode space simulation of nitride heterojunction tunneling FETs(quad chart)
  • Scalable GaSb/InAs Tunnel FETs With Non-Uniform Body Thickness(quad chart)
  • A Multiscale Modeling of Triple-Heterojunction Tunnel FETs(quad chart)
  • High-Performance Complementary ІII-V TFETs With Strain Engineering(quad chart)